Imaging element, stacked-type imaging element, and solid-state imaging apparatus

ABSTRACT

There is provided an imaging element including: a photoelectric conversion unit formed by stacking a first electrode  21 , a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode  24  that has an opposite region  24   a  opposite to the first electrode  21  via an insulating layer  82 , and a transfer control electrode  25  that is opposite to the first electrode  21  and the charge storage electrode  24  via the insulating layer  82 , and the photoelectric conversion layer is disposed above at least the charge storage electrode  24  via the insulating layer  82.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a U.S. National Phase of International PatentApplication No. PCT/JP2018/020743 filed on May 30, 2018, which claimspriority benefit of Japanese Patent Application No. JP 2017-162541 filedin the Japan Patent Office on Aug. 25, 2017. Each of theabove-referenced applications is hereby incorporated herein by referencein its entirety.

TECHNICAL FIELD

The present disclosure relates to an imaging element, a stacked-typeimaging element, and a solid-state imaging apparatus.

BACKGROUND ART

An imaging element using an organic semiconductor material for aphotoelectric conversion layer can photoelectrically convert a specificcolor (wavelength band). Further, due to having this characteristic, ina case where it is used as an imaging element in a solid-state imagingapparatus, a structure of stacking subpixels (stacked-type imagingelement) in which subpixels include a combination of an on-chip colorfilter (OCCF) layer and an imaging element, and are two-dimensionallyarranged, which is not possible in a conventional solid-state imagingapparatus, can be obtained (e.g., see Japanese Patent ApplicationLaid-Open No. 2011-138927). Furthermore, since a demosaicing process isnot necessary, there is an advantage in that false colors do not occur.In the following description, an imaging element including aphotoelectric conversion unit provided on or above a semiconductorsubstrate will be referred to as a “first-type imaging element” for thesake of convenience, a photoelectric conversion unit forming thefirst-type imaging element will be referred to as a “first-typephotoelectric conversion unit” for the sake of convenience, an imagingelement provided in the semiconductor substrate will be referred to as a“second-type imaging element” for the sake of convenience, and thephotoelectric conversion unit forming the second-type imaging elementwill be referred to as a “second-type photoelectric conversion unit” forthe sake of convenience.

FIG. 66 shows a configuration example of a conventional stacked-typeimaging element (stacked-type solid-state imaging apparatus). In theexample shown in FIG. 66, in a semiconductor substrate 370, a thirdimaging element 343 which is a second-type imaging element, a thirdphotoelectric conversion unit 343A which is a second-type photoelectricconversion unit forming a second imaging element 341, and a secondphotoelectric conversion unit 341A are stacked and formed. Furthermore,a first photoelectric conversion unit 310A which is a first-typephotoelectric conversion unit is disposed above the semiconductorsubstrate 370 (specifically, above the second imaging element 341).Here, the first photoelectric conversion unit 310A includes a firstelectrode 321, a photoelectric conversion layer 323 including an organicmaterial, and a second electrode 322, and forms a first imaging element310 which is a first-type imaging element. For example, blue and redlight are photoelectrically converted respectively in the secondphotoelectric conversion unit 341A and the third photoelectricconversion unit 343A due to a difference in absorption coefficient.Furthermore, for example, green light is photoelectrically converted inthe first photoelectric conversion unit 310A.

Charges generated by photoelectric conversion in the secondphotoelectric conversion unit 341A and the third photoelectricconversion unit 343A are temporarily stored in the second photoelectricconversion unit 341A and the third photoelectric conversion unit 343A,and then are transferred to a second floating diffusion layer FD₂ and athird floating diffusion layer FD₃ by a vertical transistor (gatesection 345 is shown) and a transfer transistor (gate section 346 isshown), respectively, and further output to an external readout circuit(not shown). These transistors and floating diffusion layers FD₂ and FD₃are also formed in the semiconductor substrate 370.

Charges generated by photoelectric conversion in the first photoelectricconversion unit 310A are stored in the first floating diffusion layerFD₁ formed in the semiconductor substrate 370 via a contact hole portion361 and a wiring layer 362. Furthermore, the first photoelectricconversion unit 310A is also connected to a gate section 352 of anamplification transistor that converts the charge amount into a voltagevia the contact hole portion 361 and the wiring layer 362. Further, thefirst floating diffusion layer FD₁ forms a part of a reset transistor(gate section 351 is shown). Reference number 371 is an elementseparation region, reference number 372 is an oxide film formed on asurface of the semiconductor substrate 370, reference numbers 376 and381 are interlayer insulating layers, reference number 383 is aninsulating layer, and reference number 314 is an on-chip microlens.

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2011-138927

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

Charges generated by the photoelectric conversion in the secondphotoelectric conversion unit 341A and the third photoelectricconversion unit 343A are temporarily stored in the second photoelectricconversion unit 341A and the third photoelectric conversion unit 343A,and then transferred to the second floating diffusion layer FD₂ and thethird floating diffusion layer FD₃. Therefore, the second photoelectricconversion unit 341A and the third photoelectric conversion unit 343Acan be completely depleted. However, charges generated by photoelectricconversion in the first photoelectric conversion unit 310A are directlystored in the first floating diffusion layer FD₁. Thus, it is difficultfor the first photoelectric conversion unit 310A to be completelydepleted. Further, as a result of the above, there is a possibility thatkTC noise increases, random noise worsens, and the image quality of thecaptured image deteriorates.

Accordingly, an object of the present disclosure is to provide animaging element in which a photoelectric conversion unit is disposed onor above a semiconductor substrate and has a configuration and astructure that can suppress degradation of image quality, a stacked-typeimaging element including the imaging element, and a solid-state imagingapparatus having the imaging element or the stacked-type imagingelement.

Solutions to Problems

In order to achieve the above issues, the present disclosure provides animaging element including:

a photoelectric conversion unit formed by stacking a first electrode, aphotoelectric conversion layer, and a second electrode,

in which the photoelectric conversion unit further includes

a charge storage electrode that has an opposite region opposite to thefirst electrode via an insulating layer, and

a transfer control electrode (a charge transfer electrode) that isopposite to the first electrode and the charge storage electrode via theinsulating layer, and

the photoelectric conversion layer is disposed above at least the chargestorage electrode via the insulating layer.

In order to achieve the above issues, the present disclosure provides astacked-type imaging element including: at least one imaging elementaccording to the present disclosure described above.

To attain the foregoing object, a solid-state imaging apparatusaccording to a first aspect of the present disclosure includes aplurality of imaging elements according to the present disclosure and aplurality of stacked-type imaging elements including at least oneimaging element according to the present disclosure.

To attain the foregoing object, a solid-state imaging apparatusaccording to a second aspect of the present disclosure includes aplurality of imaging element blocks formed by a plurality of imagingelements according to the present disclosure. A first electrode isshared by a plurality of the imaging elements forming the imagingelement block. Alternatively, the solid-state imaging apparatus includesa plurality of imaging element blocks formed by a plurality ofstacked-type imaging elements. Each stacked-type imaging elementincludes at least one imaging element according to the presentdisclosure and the first electrode is shared by the plurality of imagingelements forming the imaging element block.

Effects of the Invention

In the imaging element according to the present disclosure, the imagingelement according to the present disclosure included in the stacked-typeimaging element according to the present disclosure, and the imagingelement according to the present disclosure included in the solid-stateimaging apparatus according to the first and second aspects of thepresent disclosure (hereinafter the imaging element is generallyreferred to as an “imaging element or the like according to the presentdisclosure” in some cases), a charge storage electrode is included.Therefore, when light is emitted to the photoelectric conversion unitand is photoelectrically converted in the photoelectric conversion unit,charges can be stored in the photoelectric conversion layer. Therefore,at the start of exposure, it becomes possible to completely deplete thecharge storage portion and remove charges. As a result, it is possibleto suppress occurrence of a phenomenon in which kTC noise increases,random noise worsens, and degradation of the image quality is caused. Inaddition, the transfer control electrode disposed adjacent to the chargestorage electrode and the first electrode through the insulating layerand disposed opposite to the photoelectric conversion layer through aninsulating layer is further included. Therefore, when charges stored inthe photoelectric conversion layer are transferred to the firstelectrode, high controllability can be attained. Since an area of thecharge storage electrode does not decrease due to the disposition of thetransfer control electrode, it is possible to suppress occurrence of aproblem of an amount of saturated charges in the photoelectricconversion layer decreasing or sensitivity degrading. Further, theeffects described in this specification are not limiting but are merelyexamples, and additional effects may be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic partial sectional view of an imaging element and astacked-type imaging element of Embodiment 1 along the arrow A-A of FIG.3 of FIG. 3.

FIG. 2 is a schematic partial sectional view of an imaging element and astacked-type imaging element of Embodiment 1 along the arrow B-B of FIG.3 of FIG. 3.

FIG. 3 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode forming the imagingelement of Embodiment 1 and a transistor forming a control unit.

FIG. 4 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode forming the imagingelement of Embodiment 1.

FIGS. 5A, 5B, and 5C are schematic arrangement views of a modifiedexample of the first electrode, the charge storage electrode, and thetransfer control electrode forming a modified example of the imagingelement of Embodiment 1.

FIGS. 6A and 6B are equivalent circuit diagrams of the imaging elementof Embodiments 1 and 9 to describe each portion in FIGS. 9, 10, 11(Embodiment 1), 35, and 36 (Embodiment 9).

FIG. 7 is an equivalent circuit diagram of the imaging element ofEmbodiment 1.

FIG. 8 is an equivalent circuit diagram of the imaging element ofEmbodiment 1.

FIG. 9 is a view schematically showing a potential state in each portionduring an operation of the imaging element of Embodiment 1.

FIG. 10 is a diagram schematically showing a potential state in eachportion during another operation of the imaging element of Embodiment 1.

FIG. 11 is a diagram schematically showing a potential state in eachportion during still another operation of the imaging element ofEmbodiment 1.

FIG. 12 is an equivalent circuit diagram of a modified example of theimaging element of Embodiment 1.

FIG. 13 is a schematic arrangement view of the first electrode, thecharge storage electrode, and the transfer control electrode forming themodified example of the imaging element of Embodiment 1 shown in FIG.12, and a transistor forming a control unit.

FIGS. 14A and 14B are schematic arrangement views of a first electrode,a charge storage electrode, and a transfer control electrode forming animaging element of Embodiment 2.

FIGS. 15A and 15B are schematic arrangement views of a first electrode,a charge storage electrode, and a transfer control electrode forming animaging element of Embodiment 3.

FIG. 16 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode forming an imagingelement of Embodiment 3.

FIG. 17 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode in an imagingelement included in a solid-state imaging apparatus of Embodiment 4.

FIG. 18 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode in an imagingelement included in a modified example of the solid-state imagingapparatus of Embodiment 4.

FIG. 19 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode in an imagingelement included in another modified example of the solid-state imagingapparatus of Embodiment 4.

FIG. 20 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode in an imagingelement included in still another modified example of the solid-stateimaging apparatus of Embodiment 4.

FIG. 21 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode in an imagingelement included in still another modified example of the solid-stateimaging apparatus of Embodiment 4.

FIG. 22 is a schematic arrangement view of a first electrode, a chargestorage electrode, and a transfer control electrode in an imagingelement included in still another modified example of the solid-stateimaging apparatus of Embodiment 4.

FIGS. 23A, 23B, and 23C are a flow chart showing a readout drivingexample in an imaging element block of Embodiment 4.

FIG. 24 is a schematic arrangement view of a first electrode, a chargestorage electrode, a transfer control electrode, and an on-chipmicrolens in an imaging element included in a solid-state imagingapparatus of Embodiment 5.

FIG. 25 is a schematic partial sectional view of an imaging element ofEmbodiment 6.

FIG. 26 is a schematic partial sectional view of an imaging element ofEmbodiment 7.

FIG. 27 is a schematic partial sectional view of a modified example ofthe imaging element of Embodiment 7.

FIG. 28 is a schematic partial sectional view of another modifiedexample of the imaging element of Embodiment 7.

FIG. 29 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 7.

FIG. 30 is a schematic partial sectional view of a part of an imagingelement of Embodiment 8.

FIG. 31 is a schematic partial sectional view of an imaging element ofEmbodiment 9.

FIG. 32 is an equivalent circuit diagram of the imaging element ofEmbodiment 9.

FIG. 33 is an equivalent circuit diagram of the imaging element ofEmbodiment 9.

FIG. 34 is a schematic arrangement view of a first electrode and acharge storage electrode forming the imaging element of Embodiment 9 anda transistor forming a control unit.

FIG. 35 is a view schematically showing a potential state in eachportion during an operation of the imaging element of Embodiment 9.

FIG. 36 is a view schematically showing a potential state in eachportion during another operation (during transfer) of the imagingelement of Embodiment 9.

FIG. 37 is a schematic arrangement view of a first electrode and acharge storage electrode forming a modified example of the imagingelement of Embodiment 9.

FIG. 38 is a schematic partial sectional view of an imaging element ofEmbodiment 10.

FIG. 39 is an enlarged schematic partial sectional view of a part inwhich a charge storage electrode, a photoelectric conversion layer, anda second electrode are stacked in the imaging element of Embodiment 10.

FIG. 40 is a schematic arrangement view of the first electrode and thecharge storage electrode forming the modified example of the imagingelement of Embodiment 10, and a transistor forming a control unit.

FIG. 41 is an enlarged schematic partial sectional view of a part inwhich a charge storage electrode, a photoelectric conversion layer, anda second electrode are stacked in an imaging element of Embodiment 11.

FIG. 42 is a schematic partial sectional view of an imaging element ofEmbodiment 12.

FIG. 43 is a schematic partial sectional view of an imaging element ofEmbodiment 13 and Embodiment 14.

FIGS. 44A and 44B show schematic plan views of a charge storageelectrode segment in Embodiment 14.

FIGS. 45A and 45B show schematic plan views of a charge storageelectrode segment in Embodiment 14.

FIG. 46 is a schematic arrangement view of a first electrode and acharge storage electrode forming the imaging element of Embodiment 14,and a transistor forming a control unit.

FIG. 47 is a schematic arrangement view of a first electrode and acharge storage electrode forming a modified example of the imagingelement of Embodiment 14.

FIG. 48 is a schematic partial sectional view of an imaging element ofEmbodiment 15 and Embodiment 14.

FIGS. 49A and 49B show schematic plan views of a charge storageelectrode segment in Embodiment 15.

FIG. 50 is a schematic partial sectional view of another modifiedexample of the imaging element of Embodiment 1.

FIG. 51 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 1.

FIGS. 52A, 52B, and 52C are enlarged schematic partial sectional viewsof a part or the like of the first electrode of still another modifiedexample of the imaging element of Embodiment 1.

FIG. 53 is an enlarged schematic partial sectional view of a part or thelike of a charge discharge electrode of still another modified exampleof the imaging element of Embodiment 8.

FIG. 54 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 1.

FIG. 55 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 1.

FIG. 56 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 1.

FIG. 57 is a schematic partial sectional view of another modifiedexample of the imaging element of Embodiment 1.

FIG. 58 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 1.

FIG. 59 is a schematic partial sectional view of still another modifiedexample of the imaging element of Embodiment 1.

FIG. 60 is an enlarged schematic partial sectional view of a part inwhich a charge storage electrode, a photoelectric conversion layer, anda second electrode are stacked in the modified example of the imagingelement of Embodiment 10.

FIG. 61 is an enlarged schematic partial sectional view of a part inwhich a charge storage electrode, a photoelectric conversion layer, anda second electrode are stacked in the modified example of the imagingelement of Embodiment 11.

FIG. 62 is a schematic partial sectional view of still another modifiedexample of the imaging element and stacked-type imaging element ofEmbodiment 1.

FIGS. 63A and 63B are schematic arrangement views of the firstelectrode, the charge storage electrode, and the transfer controlelectrode according to still another modified example of the imagingelement and the stacked-type imaging element of Embodiment 1.

FIG. 64 is a conceptual diagram of a solid-state imaging apparatus ofEmbodiment 1.

FIG. 65 is a conceptual diagram of an example in which a solid-stateimaging apparatus including the imaging element or the like according tothe present disclosure is used in an electronic device (camera).

FIG. 66 is a conceptual diagram of a conventional stacked-type imagingelement (stacked-type solid-state imaging apparatus).

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present disclosure will be described on the basis ofembodiments with reference to the drawings, but the present disclosureis not limited to the embodiments, and various numerical values andmaterials in the embodiments are illustrative only. Further, thedescription will be given in the following order.

1. Overall description of imaging element according to the presentdisclosure, stacked-type imaging element according to the presentdisclosure, and solid-state imaging apparatuses according to the firstand second aspects of the present disclosure.

2. Embodiment 1 (imaging element according to the present disclosure,stacked-type imaging element according to the present disclosure, andsolid-state imaging apparatus according to the first aspect of thepresent disclosure)

3. Embodiment 2 (modification of Embodiments 1)

4. Embodiment 3 (another modification of Embodiment 1)

5. Embodiment 4 (solid-state imaging apparatus according to secondaspect of the present disclosure)

6. Embodiment 5 (modification of Embodiment 4)

7. Embodiment 6 (modifications of Embodiments 1 to 4)

8. Embodiment 7 (modifications of Embodiments 1 to 6)

9. Embodiment 8 (modifications of Embodiments 1 to 7, imaging elementincluding charge discharge electrode)

10. Embodiment 9 (modifications of Embodiments 1 to 8, imaging elementincluding plurality of charge storage electrode segments)

11. Embodiment 10 (imaging elements of first and sixth configurations)

12. Embodiment 11 (imaging elements of second and sixth configurationsof the present disclosure)

13. Embodiment 12 (imaging element of third configuration)

14. Embodiment 13 (imaging element of fourth configuration)

15. Embodiment 14 (imaging element of fifth configuration)

16. Embodiment 15 (imaging element of sixth configuration)

17. Others

<Imaging Element of the Present Disclosure, Stacked-Type Imaging Elementof the Present Disclosure, and Solid-State Imaging Apparatus Accordingto First and Second Aspects of the Present Disclosure>

In a solid-state imaging apparatus according to a second aspect of thepresent disclosure, a plurality of imaging elements is arranged in a2-dimensional matrix form and an imaging element block can be formed by2×2 imaging elements. Alternatively, the plurality of imaging elementsis arranged in a 2-dimensional matrix form and the imaging element blockcan be formed by two imaging elements adjacent in a diagonal direction.Alternatively, the plurality of imaging elements is arranged in a2-dimensional matrix form and the imaging element block can be formed bytwo imaging elements adjacent in an imaging horizontal direction.Moreover, in the solid-state imaging apparatus according to the secondaspect of the present disclosure including such a preferred embodimentor the solid-state imaging apparatus according to the first aspect ofthe present disclosure, a transfer control electrode surrounds a chargestorage electrode in a frame form in each imaging element, and thetransfer control electrode can be shared by the adjacent imagingelements.

In addition, in the imaging element or the like of the presentdisclosure, a photoelectric conversion layer can be disposed above atleast the charge storage electrode and the transfer control electrodevia an insulating layer.

Further, in the imaging element or the like of the present disclosureincluding the preferred embodiment, a planar shape of the charge storageelectrode is a rectangle that has four corners including a first corner,a second corner, a third corner, and a fourth corner. The first cornercan be configured to correspond to an opposite region. In this case, thefirst corner can be configured to have roundness. Alternatively, thefirst corner can be configured to be chamfered (the first corner isnotched). Further, the second corner, the third corner, and the fourthcorner can be configured to similarly have roundness. Alternatively,these corners can be configured to be chamfered (these corners areconfigured to be notched and the chamfered portions include theconfiguration of the round portions). Further, in this case, thetransfer control electrode includes two transfer control electrodesegments, and two sides of the charge storage electrodes and the twotransfer control electrode segments located on both sides of theopposite region can be disposed adjacent to each other through aninsulating layer. Moreover, when two sides of the charge storageelectrodes located on both sides of the opposite region are set as afirst side and a second side, a length of the first side is L₁, and alength of a second side is L₂, a distance LL₁ between the firstelectrode and an end of the transfer control electrode segment along thefirst side can be in the range of 0.02×L₁ to 0.5×L₁ and a distance LL₂between the first electrode and an end of the transfer control electrodesegment along the second side can be in the range of 0.02×L₂ to 0.5×L₂.

Alternatively, in the imaging element or the like of the presentdisclosure including the foregoing preferred embodiment, the transfercontrol electrode can be configured to surround the charge storageelectrode in a frame form. Note that also in this case, when the twosides of the charge storage electrodes located on both sides of theopposite region are set as a first side and a second side, a length ofthe first side is L₁, and a length of the second side is L₂, a distanceLL₁′ between the first electrode and an end of a portion of the transfercontrol electrode along the first side can be in the range of 0.02×L₁ to0.5×L₁ and a distance LL₂′ between the first electrode and an end of aportion of the transfer control electrode along the second side can bein the range of 0.02×L₂ to 0.5×L₂.

Alternatively, in the imaging element or the like of the presentdisclosure including the foregoing preferred embodiment,

a planar shape of the charge storage electrode can be a rectangle,

the opposite region can be located to border along one side of thecharge storage electrode,

the transfer control electrode can be formed by two transfer controlelectrode segments,

a first transfer control electrode segment can be adjacent to theopposite region and be opposite to the first electrode and a firstregion of the charge storage electrode bordering along one side of thecharge storage electrode via the insulating layer, and

a second transfer control electrode segment can be adjacent to theopposite region and be opposite to the first electrode and a secondregion of the charge storage electrode bordering along one side of thecharge storage electrode via the insulating layer.

Moreover, in the imaging element or the like of the present disclosureincluding the various preferred embodiments and configurations describedabove,

a control unit provided on a semiconductor substrate and including adrive circuit is further included,

the first electrode, the charge storage electrode, and the transfercontrol electrode are connected to the drive circuit,

during a charge storage period, a potential V₁₁ is applied from thedrive circuit to the first electrode, a potential V₁₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₁₃ isapplied from the drive circuit to the transfer control electrode, and acharge is stored in the photoelectric conversion layer, and

during a charge transfer period, a potential V₂₁ is applied from thedrive circuit to the first electrode, a potential V₂₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₂₃ orthe potential V₁₃ is applied from the drive circuit to the transfercontrol electrode, and the charge stored in the photoelectric conversionlayer is read to the control unit via the first electrode. Here, in acase where a potential of the first electrode is higher than a potentialof the second electrode,

V₁₂>V₁₃ and V₂₂≤V₂₃≤V₂₁ (preferably V₂₂<V₂₃<V₂₁), or

V₁₂>V₁₃ and V₂₂≤V₁₃≤V₂₁ (preferably V₂₂<V₁₃<V₂₁), and

in a case where the potential of the first electrode is lower than thepotential of the second electrode,

V₁₂<V₁₃ and V₂₂≥V₂₃≥V₂₁ (preferably V₂₂>V₂₃>V₂₁), or

V₁₂<V₁₃ and V₂₂≥V₁₃≥V₂₁ (preferably V₂₂>V₁₃>V₂₁).

Further, in a case where the potential of the first electrode is higherthan the potential of the second electrode, it is desirable that V₁₂≥V₁₁(preferably V₁₂=V₁₁). In a case where the potential of the secondelectrode is higher than the potential of the first electrode, it isdesirable that V₁₁≤V₁₂ (preferably V₁₁=V₁₂).

Moreover, in the imaging element or the like of the present disclosureincluding the various preferred embodiments and configurations describedabove,

a semiconductor substrate is further included, and

the photoelectric conversion unit can be disposed above thesemiconductor substrate. Further, the first electrode, the chargestorage electrode, the transfer control electrode, and the secondelectrode are connected to a drive circuit to be described below.

The second electrode positioned on the light incident side may be sharedby a plurality of imaging elements. That is, the second electrode may bea so-called solid electrode. The photoelectric conversion layer may beshared by a plurality of imaging elements, that is, one layer of thephotoelectric conversion layer may be formed in a plurality of imagingelements, or the photoelectric conversion layer may be provided for eachimaging element.

Moreover, in the imaging element or the like according to the presentdisclosure including various preferred embodiments and configurationsdescribed above, the first electrode may extend in an opening providedin the insulating layer and may be connected to the photoelectricconversion layer. Alternatively, the photoelectric conversion layer mayextend in the opening provided in the insulating layer and may beconnected to the first electrode, and in this case,

the edge of the top surface of the first electrode is covered with aninsulating layer,

the first electrode is exposed on the bottom surface of the opening,

when the surface of the insulating layer in contact with the top surfaceof the first electrode is defined as the first surface and the surfaceof the insulating layer in contact with a part of the photoelectricconversion layer opposite to the charge storage electrode is defined asthe second surface, the side surface of the opening may have aninclination extending from the first surface toward the second surface,and moreover, the side surface of the opening having an inclinationextending from the first surface toward the second surface may bepositioned on the charge storage electrode side. Further, an embodimentin which another layer is formed between the photoelectric conversionlayer and the first electrode (for example, an embodiment in which amaterial layer suitable for charge storage is formed between thephotoelectric conversion layer and the first electrode) is included.

Moreover, in the imaging element or the like according to the presentdisclosure including the various preferred embodiments andconfigurations described above, a charge discharge electrode which isconnected to the photoelectric conversion layer and disposed to bespaced apart from the first electrode, the charge storage electrode, andthe transfer control electrode may be further included. Further, forconvenience, the imaging element or the like of the present disclosureaccording to such an embodiment will be referred to as an “imagingelement or the like according to the present disclosure provided with acharge discharge electrode”. Further, in the imaging element or the likeaccording to the present disclosure provided with a charge dischargeelectrode, the charge discharge electrode may be disposed to surroundthe first electrode, the charge storage electrode, and the transfercontrol electrode (that is, in a frame form). The charge dischargeelectrode may be shared by (commonized in) a plurality of the imagingelements. And in these cases,

the photoelectric conversion layer may extend in the second openingprovided in the insulating layer and may be connected to the chargedischarge electrode,

the edge of the top surface of the charge discharge electrode may becovered with the insulating layer, and

the charge discharge electrode may be exposed on the bottom surface ofthe second opening.

When the surface of the insulating layer in contact with the top surfaceof the charge discharge electrode is defined as a third surface and thesurface of the insulating layer in contact with a part of thephotoelectric conversion layer opposite to the charge storage electrodeis defined as a second surface, the side surface of the second openingmay have an inclination that expands from the third surface toward thesecond surface.

Moreover, in the imaging element or the like of the present disclosureincluding a charge discharge electrode,

a control unit is provided on a semiconductor substrate and including adrive circuit,

the first electrode, the charge storage electrode, the transfer controlelectrode, and the charge discharge electrode are connected to the drivecircuit,

during a charge storage period, a potential V₁₁ is applied from thedrive circuit to the first electrode, a potential V₁₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₁₄ isapplied from the drive circuit to the charge discharge electrode, and acharge is stored in the photoelectric conversion layer, and

during a charge transfer period, a potential V₂₁ is applied from thedrive circuit to the first electrode, a potential V₂₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₂₄ isapplied from the drive circuit to the charge discharge electrode, andthe charge stored in the photoelectric conversion layer is read to thecontrol unit via the first electrode. Here, in a case where a potentialof the first electrode is higher than a potential of the secondelectrode,

V₁₄>V₁₁ and V₂₄<V₂₁, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode,

V₁₄<V₁₁ and V₂₄>V₂₁.

Moreover, in the various preferred embodiments and configurationsdescribed above in the imaging element or the like of the presentdisclosure, the charge storage electrode can include a plurality ofcharge storage electrode segments. For convenience, the imaging elementor the like of the present disclosure according to such an embodiment isreferred to as “an imaging element or the like of the present disclosureincluding the plurality of charge storage electrode segments”. Moreover,the number of charge storage electrode segments may be 2 or more.Further, in the imaging element or the like of the present disclosureincluding the plurality of charge storage electrode segments, in a casewhere a different potential is applied to each of N charge storageelectrode segments,

in a case where the potential of the first electrode is higher than thepotential of the second electrode, in the charge transfer period, thepotential applied to the charge storage electrode segment (the firstphotoelectric conversion unit segment) positioned closest to the firstelectrode may be higher than the potential applied to the charge storageelectrode segment (the N^(th) photoelectric conversion unit segment)positioned farthest from the first electrode, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode, in the charge transfer period, thepotential applied to the charge storage electrode segment (the firstphotoelectric conversion unit segment) positioned closest to the firstelectrode may be lower than the potential applied to the charge storageelectrode segment (the N^(th) photoelectric conversion unit segment)positioned farthest from the first electrode.

In the imaging element or the like according to the present disclosureincluding the various preferred embodiments and configurations describedabove,

at least a floating diffusion layer and an amplification transistorforming a control unit may be provided on a semiconductor substrate.

The first electrode may be connected to a gate section of the floatingdiffusion layer and the amplification transistor. Further, in this case,

a reset transistor and a select transistor forming the control unit maybe further provided on the semiconductor substrate.

The floating diffusion layer may be connected to a source/drain regionof one side of the reset transistors.

The source/drain region of one side of the amplification transistor maybe connected to the source/drain region of one side of the selecttransistor, and the source/drain region of another side of the selecttransistor may be connected to a signal line.

Moreover, in the imaging element or the like according to the presentdisclosure including the various preferred embodiments andconfigurations described above, the size of the charge storage electrodemay be larger than that of the first electrode. When the area of thecharge storage electrode is defined as S₁′, and the area of the firstelectrode is defined as S₁,

it is preferable to satisfy 4≤S₁′/S₁,

but the present disclosure is not limited thereto.

Alternatively, modified examples of the imaging element or the like ofthe present disclosure including the various preferred embodimentsdescribed above include imaging elements of first to sixthconfigurations to be described below. That is, in the imaging elementsof the first to sixth configurations in the imaging element or the likeof the present disclosure including the various preferred embodimentsdescribed above,

the photoelectric conversion unit includes N (where N≥2) photoelectricconversion unit segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

an insulating layer includes N insulating layer segments,

in the imaging elements of the first to third configurations, the chargestorage electrode includes N charge storage electrode segments,

in the imaging elements of the fourth and fifth configurations, thecharge storage electrode includes N charge storage electrode segmentsdisposed to be separate from each other,

an n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment includes an n^(th) charge storage electrode segment, an n^(th)insulating layer segment, and an n^(th) photoelectric conversion layersegment, and

the photoelectric conversion unit segment of a larger value of n islocated away from the first electrode.

Further, in the imaging element of the first configuration, thethickness of an insulating layer segment gradually changes from thefirst photoelectric conversion unit segment to the N^(th) photoelectricconversion unit segment. Furthermore, in the imaging element of thesecond configuration, the thickness of the photoelectric conversionlayer segment gradually changes from the first photoelectric conversionunit segment to the N^(th) photoelectric conversion unit segment.Further, in the photoelectric conversion layer segment, the thickness ofa part of the photoelectric conversion layer may be changed and thethickness of the part of the insulating layer may be set to be constantto change the thickness of the photoelectric conversion layer segment,the thickness of the part of the photoelectric conversion layer may beset to be constant and the thickness of a part of the insulating layermay be changed to change the thickness of the photoelectric conversionlayer segment, or the thickness of the part of the photoelectricconversion layer may be changed and the thickness of the part of theinsulating layer may be changed to change the thickness of thephotoelectric conversion layer segment. Further, in the imaging elementof the third configuration, materials of the insulating layer segmentsare different in the adjacent photoelectric conversion unit segments.Furthermore, in the imaging element of the fourth configuration,materials of the charge storage electrode segments are different in theadjacent photoelectric conversion unit segments. Further, in the imagingelement of the fifth configuration, an area of the charge storageelectrode segment gradually decreases from the first photoelectricconversion unit segment to the N^(th) photoelectric conversion unitsegment. The area may continuously decrease or may decrease in astepwise manner.

Alternatively, in the imaging element according to the sixthconfiguration of the imaging element or the like of the presentdisclosure including the various preferred embodiments described above,in a case in which a stacking direction of the charge storage electrode,the insulating layer, and the photoelectric conversion layer is definedas a Z direction and a direction away from the first electrode isdefined as an X direction, a cross-sectional area of a stacked portionwhen the stacked portion in which the charge storage electrode, theinsulating layer, and the photoelectric conversion layer are stacked iscut in a YZ virtual plane varies depending on a distance from the firstelectrode. The cross sectional area may vary continuously or in stepwisemanner.

In the imaging elements according to the first and secondconfigurations, N photoelectric conversion layer segments are providedin series, N insulating layer segments are also provided in series, andN charge storage electrode segments are also provided in series. In theimaging elements according to the third to fifth configurations, Nphotoelectric conversion layer segments are provided in series.Furthermore, in the imaging elements according to the fourth and fifthconfigurations, N insulating layer segments are provided in series,while N insulating layer segments are provided to correspond to each ofthe photoelectric conversion unit segments in the imaging elementaccording to the third configuration. Moreover, in the imaging elementaccording to the fourth and fifth configurations, in some cases, in theimaging element according to the third configuration, N charge storageelectrode segments are provided to correspond to each of thephotoelectric conversion unit segments. Further, in the imaging elementsaccording to the first to sixth configurations, the same potential isapplied to all of the charge storage electrode segments. Alternatively,in the imaging elements according to the fourth and fifthconfigurations, in some cases, in the imaging element according to thethird configuration, a different potential may be applied to each of theN charge storage electrode segments.

In the imaging element or the like of the present disclosure includingthe imaging elements of the first to sixth configurations, the thicknessof the insulating layer segment is defined, the thickness of thephotoelectric conversion layer segment is defined, the material of theinsulating layer segment is different, the material of the chargestorage electrode segment is different, the area of the charge storageelectrode segment is defined, or the cross-sectional area of the stackedportion is defined. Therefore, a type of charge transfer gradient isformed, and charges generated through photoelectric conversion can betransferred more easily and reliably to the first electrode. Further, asa result, it is possible to prevent occurrence of afterimages andtransfer residues.

In the imaging elements according to the first to fifth configurations,a photoelectric conversion unit segment having a larger value of n islocated farther from the first electrode, but whether or not it islocated away from the first electrode is determined on the basis of an Xdirection. Furthermore, in the imaging element according to the sixthconfiguration, a direction away from the first electrode is defined asthe X direction, and the “X direction” is defined as follows. That is, apixel region in which a plurality of imaging elements or stacked-typeimaging elements is arrayed includes a plurality of pixels regularlyarranged in a two-dimensional array, that is, in the X direction and a Ydirection. In a case where the planar shape of the pixel is a rectangle,a direction in which the side closest to the first electrode extends isdefined as the Y direction and the direction orthogonal to the Ydirection is defined as the X direction. Alternatively, in a case wherethe planar shape of the pixel is an arbitrary shape, the overalldirection in which the line segment or curve closest to the firstelectrode is included is defined as the Y direction and the directionorthogonal to the Y direction is defined as the X direction.

Hereinafter, a case in which the potential of the first electrode ishigher than the potential of the second electrode in the imagingelements of the first to sixth configurations will be described.

In the imaging element of the first configuration, the thickness of theinsulating layer segment gradually changes from the first photoelectricconversion unit segment to the N^(th) photoelectric conversion unitsegment. However, it is preferable that the thickness of the insulatinglayer segment be gradually thicker. As a result, a type of chargetransfer gradient is formed. Then, in the state of |V₁₂|≥|V₁₁| in thecharge storage period, the n^(th) photoelectric conversion unit segmentcan store a larger amount of charge than the (n+1)^(th) photoelectricconversion unit segment, and a strong electric field may be appliedthereto, thereby reliably preventing the charge flow from the firstphotoelectric conversion unit segment to the first electrode. Further,in the state of |V₂₂|<|V₂₁| in the charge transfer period, the chargeflow from the first photoelectric conversion unit segment to the firstelectrode, and the charge flow from the (n+1)^(th) photoelectricconversion unit segment to the n^(th) photoelectric conversion unitsegment can be reliably secured.

In the imaging element of the second configuration, the thickness of thephotoelectric conversion layer segment gradually changes from the firstphotoelectric conversion unit segment to the N^(th) photoelectricconversion unit segment, but it is preferable that the thickness of thephotoelectric conversion layer segment be gradually thicker. As aresult, a type of charge transfer gradient is formed. Further, in astate where V₁₂≥V₁₁ in the charge storage period, a stronger electricfield is applied to the n^(th) photoelectric conversion unit segmentthan to the (n+1)^(th) photoelectric conversion unit segment, therebyreliably preventing the charge flow from the first photoelectricconversion unit segment to the first electrode. In addition, whenV₂₂<V₂₁ in the charge transfer period, the charge flow from the firstphotoelectric conversion unit segment to the first electrode, the chargeflow from the (n+1)^(th) photoelectric conversion unit segment to then^(th) photoelectric conversion unit segment can be reliably secured.

In the imaging element according to the third configuration, thematerial forming the insulating layer segment is different in adjacentphotoelectric conversion unit segments, thereby forming a type of chargetransfer gradient, but it is preferable that the value of the relativedielectric constant of the material forming the insulating layer segmentgradually decrease from the first photoelectric conversion unit segmentto the N^(th) photoelectric conversion unit segment. Further, when sucha configuration is adopted, in the state of V₁₂≥V₁₁ during the chargestorage period, the n^(th) photoelectric conversion unit segment canstore a larger amount of charge than the (n+1)^(th) photoelectricconversion unit segment. In addition, when V₂₂<V₂₁ in the chargetransfer period, the charge flow from the first photoelectric conversionunit segment to the first electrode, the charge flow from the (n+1)^(th)photoelectric conversion unit segment to the n^(th) photoelectricconversion unit segment can be reliably secured.

In the imaging element according to the fourth configuration, materialsforming the charge storage electrode segment are different in adjacentphotoelectric conversion unit segments, thereby forming a type of chargetransfer gradient, but it is preferable that the value of the workfunction of the material forming the insulating layer segment graduallyincrease from the first photoelectric conversion unit segment to theN^(th) photoelectric conversion unit segment. Further, when such aconfiguration is adopted, a potential gradient advantageous to signalcharge transfer can be formed without depending on a positive/negativepolarity of a voltage.

In the imaging element according to the fifth configuration, an area ofthe charge storage electrode segment gradually decreases from the firstphotoelectric conversion unit segment to the N^(th) photoelectricconversion unit segment. As a result, a type of charge transfer gradientis formed, and thus, when V₁₂≥V₁₁ in the charge storage period, then^(th) photoelectric conversion unit segment can store a larger amountof charge than the (n+1)^(th) photoelectric conversion unit segment. Inaddition, when V₂₂<V₂₁ in the charge transfer period, the charge flowfrom the first photoelectric conversion unit segment to the firstelectrode, the charge flow from the (n+1)^(th) photoelectric conversionunit segment to the n^(th) photoelectric conversion unit segment can bereliably secured.

In the imaging element according to the sixth configuration, across-sectional area of the stacked portion varies depending on thedistance from the first electrode, thereby forming a type of chargetransfer gradient. Specifically, when a configuration in which thethickness of the cross section of the stacked portion is constant andthe width of the cross section of the stacked portion decreases as beingaway from the first electrode is adopted, as explained in the imagingelement according to the fifth configuration, when V₁₂≥V₁₁ in the chargestorage period, a larger amount of charge can be stored in the regionclose to the first electrode than in the region far from the firstelectrode. Accordingly, when V₂₂<V₂₁ in the charge transfer period, thecharge flow from the region close to the first electrode to the firstelectrode, and the charge flow from the region far from the firstelectrode to the region close to the first electrode can be reliablyensured. On the other hand, when a configuration in which the width ofthe cross section of the stacked portion is constant and the thicknessof the cross section of the stacked portion, specifically, the thicknessof the insulating layer segment gradually increases is adopted, asexplained in the imaging element according to the first configuration,when V₁₂≥V₁₁ in the charge storage period, the region close to the firstelectrode can store a larger amount of charge than the region far fromthe first electrode, and a strong electric field can be applied thereto,and thus the charge flow from the region close to the first electrode tothe first electrode can be reliably prevented. Further, when V₂₂<V₂₁ inthe charge transfer period, the charge flow from the region close to thefirst electrode to the first electrode and the charge flow from theregion far from the first electrode to the region close to the firstelectrode can be reliably ensured. Furthermore, when a configuration inwhich the thickness of the photoelectric conversion layer segmentgradually increases, as explained in the imaging element according tothe second configuration, when V₁₂≥V₁₁ in the charge storage period, theregion close to the first electrode is applied with a stronger electricfield than the region far from the first electrode, and thus the chargeflow from the region close to the first electrode to the first electrodecan be reliably prevented. Further, when V₂₂<V₂₁ in the charge transferperiod, the charge flow from the region close to the first electrode tothe first electrode and the charge flow from the region far from thefirst electrode to the region close to the first electrode can bereliably ensured.

Two or more types of the imaging elements of the first to sixthconfigurations described above can be appropriately combined inaccordance with a desire.

As a modified example of the solid-state imaging apparatus according tothe second aspect of the present disclosure,

the plurality of imaging elements of the first to sixth configurationsis included.

An imaging element block includes the plurality of imaging elements.

In the solid-state imaging apparatus, the first electrode can be sharedby the plurality of imaging elements included in the imaging elementblock. For convenience, the solid-state imaging apparatus that has sucha configuration is referred to as “a solid-state imaging apparatus ofthe first configuration”. Alternatively, as a modified example of thesolid-state imaging apparatus according to the second aspect of thepresent disclosure,

there is provided a solid-state imaging apparatus that includes theimaging elements of the first to sixth configurations or a plurality ofstacked-type imaging elements including at least one of the imagingelements of the first to sixth configurations,

in which the plurality of imaging elements or stacked-type imagingelements forms the imaging element block, and

in which the first electrode is shared by the plurality of imagingelements or stacked-type imaging elements forming the imaging elementblock. For convenience, the solid-state imaging apparatus that has sucha configuration is referred to as “a solid-state imaging apparatus ofthe second configuration”. Further, since the first electrode is sharedby the plurality of imaging elements forming the imaging element blockin this way, the configuration or structure in the pixel region in whichthe plurality of imaging elements are arrayed can be simplified orminiaturized.

In the solid-state imaging apparatus according to the second aspect ofthe present disclosure, one floating diffusion layer is provided for aplurality of imaging elements (one imaging element block). Here, aplurality of the imaging elements provided for one floating diffusionlayer may include a plurality of first-type imaging elements to bedescribed below, or may include at least one first-type imaging elementand one or two or more second-type imaging elements to be describedbelow. Further, the plurality of imaging elements may share one floatingdiffusion layer by suitably controlling the timing of the chargetransfer period. The plurality of imaging elements is operated inassociation with each other and is connected to a drive circuit to bedescribed below as an imaging element block. That is, a plurality ofimaging elements forming an imaging element block is connected to onedrive circuit. However, control of the charge storage electrode isperformed for each imaging element. Furthermore, the plurality ofimaging elements may share one contact hole portion. An arrangementrelationship between the first electrode shared by the plurality ofimaging elements and the charge storage electrode of each imagingelement is that the first electrode is disposed adjacent to the oppositeregion of the charge storage electrode of each imaging element.

Moreover, in the imaging element or the like of the present disclosureincluding the various preferred embodiments and configurations describedabove, light can be incident from the second electrode side and a lightshielding layer can be formed on the light incident side of the secondelectrode. Alternatively, light can be incident from the secondelectrode side and no light can be incident on the first electrode (thefirst electrode and the transfer control electrode in some cases).Further, in this case, a light shielding layer can be formed on a lightincident side from the second electrode and above the first electrode(the first electrode and the transfer control electrode in some cases)or an on-chip microlens can be provided above the charge storageelectrode and the second electrode, and thus light incident on theon-chip microlens can be condensed on the charge storage electrode.Here, the light shielding layer may be disposed above the surface on thelight incident side of the second electrode or may be disposed on thelight incident side surface of the second electrode. In some cases, thelight shielding layer may be formed on the second electrode. Examples ofmaterials of the light shielding layer include chromium (Cr), copper(Cu), aluminum (Al), tungsten (W), and a light proof resin (e.g.,polyimide resin).

Specific examples of the imaging element or the like according to thepresent disclosure include an imaging element (for convenience, referredto as a “first-type blue imaging element”) having a photoelectricconversion layer or a photoelectric conversion unit which absorbs bluelight (light of 425 nm to 495 nm) (for convenience, referred to as a“first-type blue photoelectric conversion layer” or a “first-type bluephotoelectric conversion unit”) and having sensitivity to blue light, animaging element (for convenience, referred to as a “first-type greenimaging element”) having a photoelectric conversion layer or aphotoelectric conversion unit which absorbs green light (light of 495 nmto 570 nm) (for convenience, referred to as a “first-type greenphotoelectric conversion layer” or a “first-type green photoelectricconversion unit”) and having sensitivity to green light, and an imagingelement (for convenience, referred to as a “first-type red imagingelement”) having a photoelectric conversion layer or a photoelectricconversion unit which absorbs red light (light of 620 nm to 750 nm) (forconvenience, referred to as a “first-type red photoelectric conversionlayer” or a “first-type red photoelectric conversion unit”) and havingsensitivity to red light. Further, the conventional imaging elementwithout the charge storage electrode and sensitive to blue light is, forconvenience, referred to as a “second-type blue imaging element”, animaging element sensitive to green light is, for convenience, referredto as a “second-type green imaging element”, an imaging elementsensitive to red light is, for convenience, referred to as a“second-type red imaging element”, a photoelectric conversion layer or aphotoelectric conversion unit forming the second-type blue imagingelement is, for convenience, referred to as a “second-type bluephotoelectric conversion layer” or a “second-type blue photoelectricconversion unit”, a photoelectric conversion layer or a photoelectricconversion unit forming the second-type green imaging element is, forconvenience, referred to as a “second-type green photoelectricconversion layer” or a “second-type green photoelectric conversionunit”, and a photoelectric conversion layer or a photoelectricconversion unit forming the second-type red imaging element is, forconvenience, referred to as a “second-type red photoelectric conversionlayer” or a “second-type red photoelectric conversion unit”.

The stacked-type imaging element according to the present disclosureincludes at least one imaging element (photoelectric conversion element)according to the present disclosure, and specific examples thereofinclude:

[A] the configuration and structure in which the first-type bluephotoelectric conversion unit, the first-type green photoelectricconversion unit, and the first-type red photoelectric conversion unitare stacked in the vertical direction, and each of the control units ofthe first-type blue imaging element, the first-type green imagingelement, and the first-type red imaging element is provided on thesemiconductor substrate;[B] the configuration and structure in which the first-type bluephotoelectric conversion unit and the first-type green photoelectricconversion unit are stacked in the vertical direction,

the second-type red photoelectric conversion unit is disposed belowthese two layers of the first-type photoelectric conversion units,

and each of the control units of the first-type blue imaging element,the first-type green imaging element, and the second-type red imagingelement is provided on the semiconductor substrate;

[C] the configuration and structure in which the second-type bluephotoelectric conversion unit and the second-type red photoelectricconversion unit are disposed below the first-type green photoelectricconversion unit,

and each of the control units of the first-type green imaging element,the second-type blue imaging element, and the second-type red imagingelement is provided on the semiconductor substrate; and

[D] the configuration and structure in which the second-type greenphotoelectric conversion unit and the second-type red photoelectricconversion unit are disposed below the first-type blue photoelectricconversion unit,

and each of the control units of the first-type blue imaging element,the second-type green imaging element, and the second-type red imagingelement is provided on the semiconductor substrate. Further, thearrangement order of the photoelectric conversion units of these imagingelements in the vertical direction is preferably an order of the bluephotoelectric conversion unit, the green photoelectric conversion unit,and the red photoelectric conversion unit from the light incidencedirection, or an order of the green photoelectric conversion unit, theblue photoelectric conversion unit, and the red photoelectric conversionunit from the light incidence direction. This is because shorterwavelength light is more efficiently absorbed on the incident surfaceside. Since red is the longest wavelength among the three colors, it ispreferable to locate the red photoelectric conversion unit at thelowermost layer as viewed from the light incident surface. One pixel isformed by the stacked structure of these imaging elements. Furthermore,the first-type near infrared photoelectric conversion unit (or infraredphotoelectric conversion unit) may be provided. Here, it is preferablethat the photoelectric conversion layer of the first-type infraredphotoelectric conversion unit include, for example, an organic material,and be the lowermost layer of the stacked structure of the first-typeimaging element, and be disposed above the second-type imaging element.Alternatively, the second-type near infrared photoelectric conversionunit (or infrared photoelectric conversion unit) may be provided belowthe first-type photoelectric conversion unit.

In the first-type imaging element, for example, the first electrode isformed on the interlayer insulating layer provided on the semiconductorsubstrate. The imaging element formed on the semiconductor substrate maybe of a back surface illuminated type or of a front surface illuminatedtype.

In a case where the photoelectric conversion layer includes organicmaterials, one of the following four embodiments may be used:

The photoelectric conversion layer includes (1) a p-type organicsemiconductor.

The photoelectric conversion layer includes (2) an n-type organicsemiconductor.

The photoelectric conversion layer includes (3) a stacked structure of ap-type organic semiconductor layer/an n-type organic semiconductorlayer. The photoelectric conversion layer includes a stacked structureof a p-type organic semiconductor layer/a mixed layer (bulk heterostructure) of a p-type organic semiconductor and an n-type organicsemiconductor/an n-type organic semiconductor layer. The photoelectricconversion layer includes a stacked structure of a p-type organicsemiconductor layer/a mixed layer (bulk hetero structure) of a p-typeorganic semiconductor and an n-type organic semiconductor. Thephotoelectric conversion layer includes a stacked structure of an n-typeorganic semiconductor layer/a mixed layer (bulk hetero structure) of ap-type organic semiconductor and an n-type organic semiconductor.

The photoelectric conversion layer includes (4) a mixture (bulk heterostructure) of a p-type organic semiconductor and an n-type organicsemiconductor.

However, the stacking order may be arbitrarily exchanged.

Examples of the p-type organic semiconductor include a naphthalenederivative, an anthracene derivative, a phenanthrene derivative, apyrene derivative, a perylene derivative, a tetracene derivative, apentacene derivative, a quinacridone derivative, a thiophene derivative,a thienothiophene derivative, a benzothiophene derivative, abenzothienobenzothiophene derivative, a triallylamine derivative, acarbazole derivative, a perylene derivative, a picene derivative, achrysene derivative, a fluoranthene derivative, a phthalocyaninederivative, a subphthalocyanine derivative, a subporphyrazinederivative, a metal complex having a heterocyclic compound as a ligand,a polythiophene derivative, a polybenzothiadiazole derivative, apolyfluorene derivative, etc. Examples of the n-type organicsemiconductor include fullerenes and fullerene derivatives (e.g.,fullerenes (higher fullerene) such as C60, C70, C74 fullerenes or thelike, endohedral fullerene or the like), or fullerene derivatives (e.g.,fullerene fluoride, PCBM fullerene compound, fullerene polymer, etc.)),organic semiconductors with larger (deeper) HOMO and LUMO than those ofp-type organic semiconductors, and transparent inorganic metal oxides.Specific examples of the n-type organic semiconductor include aheterocyclic compound containing a nitrogen atom, an oxygen atom, and asulfur atom, for example, organic molecules and organometallic complexeshaving pyridine derivatives, pyrazine derivatives, pyrimidinederivatives, triazine derivatives, quinoline derivatives, quinoxalinederivatives, isoquinoline derivatives, acridine derivatives, phenazinederivatives, phenanthroline derivatives, tetrazole derivatives, pyrazolederivatives, imidazole derivatives, thiazole derivatives, oxazolederivatives, imidazole derivatives, benzimidazole derivatives,benzotriazole derivatives, benzoxazole derivatives, benzoxazolederivatives, carbazole derivatives, benzofuran derivatives, dibenzofuranderivatives, subporphyrazine derivative, polyphenylene vinylenederivatives, polybenzothiadiazole derivatives, polyfluorene derivatives,and the like as a part of the molecular skeleton, and subphthalocyaninederivatives. Examples of a functional group or the like included infullerene derivatives include a halogen atom; a linear, branched orcyclic alkyl group or phenyl group; a functional group having a linearor condensed aromatic compound; a functional group having a halide; apartial fluoroalkyl group; a perfluoroalkyl group; a silylalkyl group; asilylalkoxy group; an arylsilyl group; an arylsulfanyl group; analkylsulfanyl group; an arylsulfonyl group; an alkylsulfonyl group; anarylsulfide group; an alkylsulfide group; an amino group; an alkylaminogroup; an arylamino group; a hydroxy group; an alkoxy group; anacylamino group; an acyloxy group; a carbonyl group; a carboxy group; acarboxamide group; a carboalkoxy group; an acyl group; a sulfonyl group;a cyano group; a nitro group; a functional group having a chalcogenide;a phosphine group; a phosphonic group; and derivatives thereof. Thethickness of the photoelectric conversion layer (may be referred to as“organic photoelectric conversion layer”) including an organic materialmay be, without being limited to, for example, 1×10⁻⁸ m to 5×10⁻⁷ m,preferably 2.5×10⁻⁸ m to 3×10⁻⁷ m, more preferably 2.5×10⁻⁸ m to 2×10⁻⁷m, and still more preferably 1×10⁻⁷ m to 1.8×10⁻⁷ m. Further, an organicsemiconductor is often classified as p-type or n-type, but p-typeindicates that holes can be easily transported, and n-type indicatesthat electrons can be easily transported, and an organic semiconductoris not limited to the interpretation that it has holes or electrons asmajority carriers of thermal excitation as in inorganic semiconductors.

Alternatively, examples of the material forming an organic photoelectricconversion layer that photoelectrically converts green light includerhodamine-based pigment, melacyanine-based pigment, quinacridonederivative, subphthalocyanine-based pigment (subphthalocyaninederivative), etc. Examples of the material forming an organicphotoelectric conversion layer that photoelectrically converts bluelight include coumarinic acid pigment, tris-8-hydricoxyquinolinealuminum (Alq3), melacyanin-based pigment, etc. Examples of the materialforming an organic photoelectric conversion layer that photoelectricallyconverts red light include phthalocyanine-based pigment andsubphthalocyanine-based pigment (subphthalocyanine derivative).

Alternatively, examples of the inorganic material forming thephotoelectric conversion layer include crystalline silicon, amorphoussilicon, microcrystalline silicon, crystalline selenium, amorphousselenium, chalcopyrite compounds such as CIGS (CuInGaSe), CIS (CuInSe₂),CuInS₂, CuAlS₂, CuAlSe₂, CuGaS₂, CuGaSe₂, AgAlS₂, AgAlSe₂, AgInS₂,AgInSe₂, or group III-V compounds such as GaAs, InP, AlGaAs, InGaP,AlGaInP, InGaAsP, and compound semiconductors such as CdSe, CdS, In₂Se₃,In₂S₃, Bi₂Se₃, Bi₂S₃, ZnSe, ZnS, PbSe, PbS, etc. In addition, quantumdots including these materials may be used in the photoelectricconversion layer.

Alternatively, the photoelectric conversion layer may have a stackedstructure of a lower semiconductor layer and an upper photoelectricconversion layer. When the lower semiconductor layer is provided asdescribed above, the recombination during charge storage can beprevented, the efficiency of transfer of charge stored in thephotoelectric conversion layer to the first electrode can be increased,and the generation of dark current can be suppressed. The materialforming the upper photoelectric conversion layer may be suitablyselected from various materials forming the photoelectric conversionlayer. On the other hand, it is preferable to use a material having alarge band gap value (e.g., a band gap value of 3.0 eV or more) andhaving a higher mobility than a material forming the photoelectricconversion layer as a material forming the lower semiconductor layer.Specifically, oxide semiconductor materials such as IGZO,indium-tungsten oxide (IWO) which is a material in which tungsten (W) isadded to indium oxide, indium-tungsten-zinc oxide (IWZO) which is amaterial in which tungsten (W) and zinc (Zn) are added to indium oxide,indium-tin-zinc oxide (ITZO) which is a material in which tin (Sn) andzinc (Zn) are added to indium oxide, or zinc-tin oxide (ZTO); transitionmetal dichalcogenide; silicon carbide; diamond; graphene; carbonnanotube; condensed polycyclic hydrocarbon compounds, condensedheterocyclic compounds, etc. Alternatively, in a case where the chargeto be stored is an electron, an example of the material forming thelower semiconductor layer may be a material having the ionizationpotential larger than the ionization potential of the material formingthe photoelectric conversion layer. In a case where the charge to bestored is a hole, an example of the material forming the lower layersemiconductor layer may be a material having the electron affinitysmaller than the electron affinity of the material forming thephotoelectric conversion layer. Alternatively, the impurityconcentration in the material forming the lower layer semiconductorlayer is preferably 1×10¹⁸ cm⁻³ or less. The lower semiconductor layermay have a single layer configuration or a multilayer configuration.Furthermore, a material forming the lower semiconductor layer locatedabove the charge storage electrode and a material forming the lowersemiconductor layer located above the first electrode may be differentfrom each other.

With the solid-state imaging apparatus according to the first and secondaspects of the present disclosure, a single-plate type color solid-stateimaging apparatus may be formed.

In the solid-state imaging apparatus according to the first and secondaspects of the present disclosure including the stacked-type imagingelement, unlike the solid-state imaging apparatus including theBayer-array imaging element (i.e., spectroscopy for blue, green, and redis not performed using a color filter layer), imaging elements havingsensitivity to light of plural types of wavelengths are stacked in thelight incidence direction in the same pixel to form one pixel, and thusimprovement of sensitivity and pixel density per unit volume can beachieved. Furthermore, since an organic material has a high absorptioncoefficient, a film thickness of a photoelectric conversion layer can bethinner as compared to a conventional Si-based photoelectric conversionlayer, and light leakage from adjacent pixels and restriction on thelight incidence angle can be alleviated. Moreover, since theconventional Si-based imaging element produces color signals byperforming interpolation processing among three-color pixels, falsecolor is generated, but false color can be suppressed in the solid-stateimaging apparatus according to the second aspect of the presentdisclosure including the stacked-type imaging element. Further, sincethe organic photoelectric conversion layer itself functions as a colorfilter layer, color separation can be performed without disposing acolor filter layer.

On the other hand, in the solid-state imaging apparatus according to thefirst and second aspects of the present disclosure, due to using a colorfilter layer, the request for spectral characteristics of blue, green,and red can be alleviated, and moreover, mass productivity is high.Examples of the arrangement of the imaging element in such a solid-stateimaging apparatus include an interline arrangement, a G stripe-RBcheckered array, a G stripe-RB full-checkered array, a checkeredcomplementary color array, a stripe array, a diagonal stripe array, aprimary color difference array, a field color difference sequentialarray, a flame color difference sequential array, an MOS-type array, amodified MOS-type array, a flame interleave array, and a fieldinterleave array in addition to a Bayer array. Here, one pixel (orsubpixel) is formed by one imaging element.

An example of a color filter layer (wavelength selection means) includesa filter layer that transmits not only red, green, and blue but also aspecific wavelength of cyan, magenta, or yellow in some cases. The colorfilter layer can include not only an organic-material-based color filterlayer in which an organic compound such as a dye or a pigment is usedbut also a thin film including an inorganic material such as amorphoussilicon or a wavelength selection element in which photonic crystal orPlasmon is applied (a color filter layer that has a conductive gridstructure in which a grid-shaped hole structure is provided in aconductive thin film: for example, see Japanese Patent ApplicationLaid-Open No. 2008-177191).

A pixel region in which a plurality of the imaging elements or the likeaccording to the present disclosure is arrayed includes a plurality ofpixels regularly arranged in a two-dimensional array. Generally, thepixel region includes an effective pixel region which actually receiveslight, amplifies the signal charges generated by photoelectricconversion and reads it out to the drive circuit, and a black referencepixel region (also refer to an optical black pixel area (OPB)) foroutputting optical black serving as a reference of a black level. Theblack reference pixel region is generally disposed at the outerperipheral portion of the effective pixel region.

In the imaging element or the like according to the present disclosureincluding the various preferred embodiments and configurations describedabove, light is radiated, photoelectric conversion is generated on thephotoelectric conversion layer, carriers including holes and electronsare separated. Further, an electrode from which holes are extracted isreferred to as an anode, and an electrode from which electrons areextracted is defined as a cathode. The first electrode may form ananode, and the second electrode may form a cathode, or reversely, thefirst electrode may form a cathode, and the second electrode may form ananode.

In the case of forming a stacked-type imaging element, the firstelectrode, the charge storage electrode, the transfer control electrode,the charge discharge electrode, and the second electrode can include atransparent conductive material. Further, the first electrode, thecharge storage electrode, the transfer control electrode, and the chargedischarge electrode may be collectively referred to as a “firstelectrode or the like”. Alternatively, in a case where the image imagingelement or the like according to the present disclosure is arranged on aplane, for example, as in a Bayer array, the second electrode mayinclude a transparent conductive material and the first electrode or thelike may include a metal material. In this case, specifically, thesecond electrode located on the light incident side may include atransparent conductive material and the first electrode or the like mayinclude, for example, Al—Nd (alloy of aluminum and neodymium) or ASC(alloy of aluminum, samarium, and copper). Further, an electrodeincluding a transparent conductive material may be referred to as a“transparent electrode”. Here, the band gap energy of the transparentconductive material is 2.5 eV or more, and preferably, 3.1 eV or more.Examples of a transparent conductive material forming a transparentelectrode include conductive metal oxides, and specific examples thereofinclude indium oxide, indium-tin oxide (ITO including Sn-doped In₂O₃,crystalline ITO and amorphous ITO), indium-zinc oxide (IZO) in whichindium is added to zinc oxide as a dopant, indium-gallium oxide (IGO) inwhich indium is added to gallium oxide as a dopant, indium-gallium-zincoxide (IGZO, In—GaZnO₄) in which indium and gallium are added to zincoxide as a dopant, indium-tin-zinc oxide (ITZO) in which indium and tinare added to zinc oxide as a dopant, IFO (F-doped In₂O₃), tin oxide(SnO₂), ATO (Sb-doped SnO₂), FTO (F-doped SnO₂), zinc oxide (includingZnO doped with other elements), aluminum-zinc oxide (AZO) in whichaluminum is added to zinc oxide as a dopant, gallium-zinc oxide (GZO) inwhich gallium is added to zinc oxide as a dopant, titanium oxide (TiO₂),niobium-titanium oxide (TNO) in which niobium is added to titanium oxideas a dopant, antimony oxide, spinel type oxide, and an oxide having aYbFe₂O₄ structure. Alternatively, a transparent electrode having a baselayer of gallium oxide, titanium oxide, niobium oxide, nickel oxide, orthe like may be given as an example. The thickness of the transparentelectrode may be 2×10⁻⁸ m to 2×10⁻⁷ m, preferably 3×10⁻⁸ m to 1×10⁻⁷ m.In a case where transparency is necessary for the first electrode, it ispreferable that the charge discharge electrode also include atransparent conductive material from the viewpoint of simplification ofthe manufacturing process.

Alternatively, in a case where transparency is unnecessary, a conductivematerial forming an anode having a function as an electrode forextracting holes is preferably a conductive material having a high workfunction (e.g., cp=4.5 eV to 5.5 eV), and specific examples thereofinclude gold (Au), silver (Ag), chromium (Cr), nickel (Ni), palladium(Pd), platinum (Pt), iron (Fe), iridium (Ir), germanium (Ge), osmium(Os), rhenium (Re), and tellurium (Te). On the other hand, a conductivematerial forming a cathode having a function as an electrode forextracting electrons is preferably a conductive material having a lowwork function (e.g., φ=3.5 eV to 4.5 eV), and specific examples thereofinclude alkali metals (e.g., Li, Na, K, etc.) and the fluorides oroxides thereof, alkaline earth metals (e.g., Mg, Ca, etc.) and thefluorides or oxides thereof, aluminum (Al), zinc (Zn), tin (Sn),thallium (Tl), a sodium-potassium alloy, an aluminum-lithium alloy, amagnesium-silver alloy, indium, and rare earth metals such as ytterbium,or alloys thereof. Alternatively, examples of the material forming ananode or cathode include metals such as platinum (Pt), gold (Au),palladium (Pd), chromium (Cr), nickel (Ni), aluminum (Al), silver (Ag),tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In),tin (Sn), iron (Fe), cobalt (Co), molybdenum (Mo), or the like, oralloys including these metal elements, conductive particles includingthese metals, conductive particles of alloys containing these metals,polysilicon containing impurities, carbon-based materials, oxidesemiconductor materials, conductive materials such as carbon nanotubes,graphene, and the like, and a laminated structure of layers containingthese elements. Furthermore, examples of the material forming an anodeor cathode include organic materials (conductive polymers) such aspoly(3,4-ethylenedioxythiophene)/polystyrenesulfonic acid [PEDOT/PSS].Further, a paste or ink prepared by mixing these conductive materialsinto a binder (polymer) may be cured to be used as an electrode.

A dry method or wet method may be used as a film-forming method of thefirst electrode or the like (anode) and the second electrode (cathode).Examples of the dry method include a physical vapor deposition method(PVD method) and a chemical vapor deposition method (CVD method) method.Examples of the film-forming method using the principle of PVD methodinclude a vacuum deposition method using resistance heating or highfrequency heating, an electron beam (EB) deposition method, varioussputtering methods (magnetron sputtering method, RF-DC coupled biassputtering method, ECR sputtering method, facing-target sputteringmethod, and high frequency sputtering method), an ion plating method, alaser ablation method, a molecular beam epitaxy method, and a lasertransfer method. Furthermore, examples of the CVD method include aplasma CVD method, a thermal CVD method, an organic metal (MO) CVDmethod, and a photo CVD method. On the other hand, examples of the wetmethod include an electrolytic plating method and an electroless platingmethod, a spin coating method, an ink jet method, a spray coatingmethod, a stamping method, a micro contact printing method, aflexographic printing method, an offset printing method, a gravureprinting method, a dipping method, etc. As for patterning, chemicaletching such as shadow mask, laser transfer, photolithography, and thelike, physical etching by ultraviolet light, laser, and the like may beused. Examples of a planarization technique for the first electrode andsecond electrode include a laser planarization method, a reflow method,a chemical mechanical polishing (CMP) method, etc.

Examples of materials forming the insulating layer include inorganicinsulating materials exemplified by silicon oxide-based materials;silicon nitride (SiNy); a metal oxide high-dielectric constantinsulating material such as aluminum oxide (Al₂O₃) or the like as wellas organic insulating materials (organic polymers) exemplified bypolymethyl methacrylate (PMMA); polyvinyl phenol (PVP); polyvinylalcohol (PVA); polyimide, polycarbonate (PC); polyethylene terephthalate(PET); polystyrene; silanol derivatives (silane coupling agents) such asN-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS),3-mercaptopropyltrimethoxysilane (MPTMS), octadecyltrichlorosilane(OTS), or the like; novolak-type phenolic resins; fluorine-based resins,straight-chain hydrocarbons having a functional group capable of bondingto the control electrode at one end such as octadecanethiol, dodecylisocyanate, and the like, and combinations thereof. Examples of thesilicon oxide-based materials include silicon oxide (SiOx), BPSG, PSG,BSG, AsSG, PbSG, silicon oxynitride (SiON), spin-on-glass (SOG), and lowdielectric constant insulating materials (e.g., polyaryl ether,cycloperfluorocarbon polymers and benzocyclobutene, cyclic fluororesins, polytetrafluoroethylene, fluoroaryl ether, fluorinatedpolyimide, amorphous carbon, and organic SOG). The insulating layer canhave a single layer configuration or a configuration in which aplurality of layers is stacked (for example, a stacked structure of twolayers). In the latter case, an insulating lower layer may be formed ina region above at least the charge storage electrode and between thecharge storage electrode, the transfer control electrode, and the firstelectrode, the insulating lower layer may remain in the region betweenat least the charge storage electrode, the first electrode, and thetransfer control electrode by performing a flattening treatment on theinsulating lower layer, and an insulating upper layer may be formed onthe remaining insulating lower layer, the charge storage electrode, andthe transfer control electrode. As a result, the flattening of theinsulating layer can be reliably attained. Materials forming variousinterlayer insulating layers and insulating material films may besuitably selected from these materials.

The configuration and structure of the floating diffusion layer,amplification transistor, reset transistor, and select transistorforming the control unit may be similar to those of the conventionalfloating diffusion layer, amplification transistor, reset transistor,and select transistor. Also, the drive circuit may have well-knownconfiguration and structure.

The first electrode is connected to the floating diffusion layer and thegate section of the amplification transistor, and a contact hole portionmay be formed to connect the first electrode to the floating diffusionlayer and the gate section of the amplification transistor. Examples ofa material forming the contact hole portion include a high melting pointmetal such as tungsten, Ti, Pt, Pd, Cu, TiW, TiN, TiNW, WSi₂, MoSi₂, orthe like, metal silicide, or a stacked structure of layers includingthese materials (e.g., Ti/TiN/W).

A first carrier blocking layer may be provided between the organicphotoelectric conversion layer and the first electrode, or a secondcarrier blocking layer may be provided between the organic photoelectricconversion layer and the second electrode. Furthermore, a first chargeinjection layer may be provided between the first carrier blocking layerand the first electrode, or a second charge injection layer may beprovided between the second carrier blocking layer and the secondelectrode. Examples of a material forming the charge injection layerinclude alkali metals such as lithium (Li), sodium (Na), and potassium(K), fluorides and oxides thereof, alkaline earth metals such asmagnesium (Mg) and calcium (Ca), and fluorides and oxides thereof.

A dry film formation method and a wet film formation method may be givenas examples of a film-forming method for various organic layers.Examples of the dry film formation method include a vacuum depositionmethod using resistance heating, high frequency heating, or electronbeam heating, a flash deposition method, a plasma deposition method, anEB deposition method, various sputtering method (bipolar sputteringmethod, direct current sputtering method, DC magnetron sputteringmethod, RF-DC coupled bias sputtering method, ECR sputtering method,facing-target sputtering method, high frequency sputtering method, andion beam sputtering method), a direct current (DC) method, an RF method,a multi-cathode method, an activation reaction method, an electric fieldvapor deposition method, various ion plating methods such as ahigh-frequency ion plating method and a reactive ion plating method, alaser ablation method, a molecular beam epitaxy method, a laser transfermethod, and a molecular beam epitaxy (MBE) method. Furthermore, examplesof a chemical vapor deposition method include a plasma CVD method, athermal CVD method, an MOCVD method, and a photo CVD method. On theother hand, as a wet method, a spin coating method; a dipping method; acasting method; a micro contact printing method; a drop casting method;various printing methods such as a screen printing method, an ink jetprinting method, an offset printing method, a gravure printing method,and a flexographic printing method; a stamping method; a spray coatingmethod; various coating methods such as an air doctor coater method, ablade coater method, a rod coater method, a knife coater method, asqueeze coater method, a reverse roll coater method, a transfer rollcoater method, a gravure coater method, a kiss coater method, a castcoater method, a spray coater method, a slit orifice coater method, anda calendar coater method. Further, examples of a solvent in the coatingmethod include a nonpolar or low polar organic solvents such as toluene,chloroform, hexane, and ethanol. As for patterning, chemical etchingsuch as shadow mask, laser transfer, photolithography, and the like,physical etching by ultraviolet light, laser, and the like may be used.Examples of a planarization technique for various organic layers includea laser planarization method, a reflow method, etc.

In the imaging element or the solid-state imaging apparatus, asdescribed above, as necessary, an on-chip microlens or a light shieldinglayer may be provided, or a drive circuit and wiring for driving theimaging element are provided. A shutter for controlling the incidence oflight to the imaging element may be provided as necessary, or an opticalcut filter may be provided according to the purpose of the solid-stateimaging apparatus.

Furthermore, in the solid-state imaging apparatus according to the firstand second aspects of the present disclosure, one on-chip microlens canbe disposed above one imaging element or the like, or the imagingelement block can be formed by two imaging elements or the like and oneon-chip microlens can be disposed above the imaging element block.

For example, in a case where the solid-state imaging apparatus isstacked with a readout integrated circuit (ROIC), the stacking may beperformed by overlaying a drive substrate on which a readout integratedcircuit and a connection portion including copper (Cu) are formed and animaging element on which a connection portion is formed such that theconnection portions are in contact with each other, and joining theconnection portions, and it is also possible to join the connectionportions using a solder bump or the like.

Furthermore, in a driving method of driving the solid-state imagingapparatus according to the first and second aspects of the presentdisclosure,

it is possible to realize a method of driving the solid-state imagingapparatus by repeating the steps of:

discharging charges in the first electrode out of the system whilecharges are stored simultaneously in the photoelectric conversion layerin all the imaging elements; and

transferring the charges stored in the photoelectric conversion layersto the first electrode simultaneously in all the imaging elements andsequentially reading the charges transferred to the first electrode ineach imaging element after completion of the transferring.

In such a driving method of a solid-state imaging apparatus, eachimaging element has a structure in which light incident from the secondelectrode side does not enter the first electrode (in some cases, thefirst electrode and the transfer control electrode), and in all theimaging elements, charges in the first electrode is simultaneouslydischarged to the outside of the system while charges are stored in thephotoelectric conversion layer, and thus the reset of the firstelectrode can be reliably performed simultaneously in all the imagingelements. Further, thereafter, in all the imaging elements, the chargesstored in the photoelectric conversion layer are simultaneouslytransferred to the first electrode, and after completion of thetransfer, the charges transferred to the first electrode in each imagingelement are sequentially read out. Therefore, a so-called global shutterfunction can be easily realized.

Examples of the imaging element of the present disclosure include signalamplification type image sensors of a CCD element, a CMOS image sensor,a contact image sensor (CIS), and a charge modulation device (CMD). Forexample, a digital still camera, a video camera, a camcorder, asurveillance camera, a vehicle-mounted camera, a smartphone camera, agame user interface camera, and a biometric authentication camera can beconfigured from the solid-state imaging apparatus according to the firstand second aspects of the present disclosure or the solid-state imagingapparatus of the first and second configurations.

Embodiment 1

Embodiment 1 relates to an imaging element according to the presentdisclosure and a stacked-type imaging element according to the presentdisclosure, and a solid-state imaging apparatus according to the firstaspect of the present disclosure.

Schematic partial sectional views of the imaging element and thestacked-type imaging element (hereinafter simply referred to as an“imaging element” in some cases) of Embodiment 1 are shown in FIGS. 1and 2. A schematic arrangement view of a transistor included in a firstelectrode, a charge storage electrode, a transfer control electrode, anda control unit is shown in FIG. 3. A schematic arrangement view of afirst electrode, a charge storage electrode, and a transfer controlelectrode is shown in FIG. 4. Further, FIG. 1 is a schematic partialsectional view along the arrow A-A of FIG. 3 and FIG. 2 is a schematicpartial section view along the arrow B-B of FIG. 3. Here, FIG. 2 andFIGS. 30, 31, 53, 57, and 59 to be described below are simplified forconvenience by denoting various imaging element constituent elementslocated below an interlayer insulating layer 81 indicated collectivelyby reference number 13. Furthermore, schematic plan views of the firstelectrode, the charge storage electrode, the transfer control electrode,and the like according to a modified example of the imaging element ofEmbodiment 1 are shown in FIGS. 5A, 5B, and 5C. Equivalent circuitdiagrams of the imaging element of Embodiment 1 are shown in FIGS. 7 and8. A potential state of each portion during an operation of the imagingelement of Embodiment 1 is schematically shown in FIGS. 9, 10, and 11.Furthermore, to describe each portion of FIGS. 9, 10, and 11, anequivalent circuit diagram of the imaging element of Embodiment 1 isshown in FIG. 6A and a conceptual diagram of the solid-state imagingapparatus of Embodiment 1 is shown in FIG. 64.

The imaging element of Embodiment 1 includes a photoelectric conversionunit formed by stacking a first electrode 21, a photoelectric conversionlayer 23, and a second electrode 22,

the photoelectric conversion unit further includes

a charge storage electrode 24 that has an opposite region opposite tothe first electrode 21 via an insulating layer 82 and

a transfer control electrode (charge transfer electrode) 25 opposite tothe first electrode 21 and the charge storage electrode 24 via theinsulating layer 82, and

the photoelectric conversion layer 23 is disposed above at least thecharge storage electrode 24 (specifically, above at least the chargestorage electrode 24 and the transfer control electrode 25) via theinsulating layer 82. Further, light is incident from the secondelectrode side.

The stacked-type imaging element of Embodiment 1 includes at least oneimaging element of Embodiment 1. Furthermore, the solid-state imagingapparatus of Embodiment 1 includes the plurality of imaging elements ofEmbodiment 1 or the plurality of stacked-type imaging elements includingat least one imaging element of Embodiment 1. Further, for example, adigital still camera, a video camera, a camcorder, a surveillancecamera, a vehicle-mounted camera (in-vehicle camera), a smartphonecamera, a game user interface camera, a biometric authentication camera,and the like can be configured from the solid-state imaging apparatusaccording to Embodiment 1.

A planar shape of the charge storage electrode 24 is a rectangle thathas four corners including a first corner 24 a, a second corner 24 b, athird corner 24 c, and a fourth corner 24 d. The first corner 24 acorresponds to an opposite region. In the example shown in FIGS. 3 and4, two sides of the charge storage electrode 24 on both sides of eachcorner are orthogonal to each other. On the other hand, in examplesshown in FIGS. 5A, 5B, and 5C, the first corner 24 a has roundness orthe first corner 24 a is chamfered (the first corner 24 a is notched).Furthermore, in a chamfered portion of the first corner 24 a, corners ofthe first electrode 21 and the transfer control electrode 25 also haveroundness. The planar shape of the first electrode 21 can also becircular. Further, in FIG. 5C, a part of the transfer control electrode25 opposite to the charge storage electrode 24 protrudes more than inFIG. 5B. In FIGS. 4, 5A, 5B, and 5C, the first electrode 21, the chargestorage electrode 24, and the transfer control electrode 25 in FIG. 3are extracted and redrawn.

Further, the transfer control electrode 25 includes two transfer controlelectrode segments 25SG₁ and 25SG₂. Two sides 24S₁ and 24S₂ of thecharge storage electrode 24 and two transfer control electrode segments25SG₁ and 25SG₂ located on both sides of the opposite region 24 a aredisposed adjacent to each other via the insulating layer 82. Moreover,when two sides of the charge storage electrode 24 on both sides of theopposite region 24 a are a first side 24S₁ and a second side 24S₂, alength of the first side 24S₁ is L₁, a length of the second side 24S₂ isL₂, a distance LL₁ between the first electrode 21 and an end of thetransfer control electrode segment 25SG₁ along the first side 24S₁ is inthe range of 0.02×L₁ to 0.5×L₁ (specifically, 0.2×L₁) and a distance LL₂between the first electrode 21 and an end of the transfer controlelectrode segment 25SG₂ along the second side 24S₂ is in the range of0.02×L₂ to 0.5×L₂ (specifically, 0.2×L₂). Furthermore, the transfercontrol electrode (the charge transfer electrode) 25 is connected to apixel drive circuit included in a drive circuit via a connection hole68B, a pad portion 68A, and a wiring V_(OT) provided in the interlayerinsulating layer 81.

The imaging element of Embodiment 1 further includes the semiconductorsubstrate (more specifically, silicon semiconductor layer) 70 is furtherincluded, and the photoelectric conversion unit is disposed above thesemiconductor substrate 70. Furthermore, a control unit which isdisposed on the semiconductor substrate 70 and has a drive circuitconnected to the first electrode 21 and the second electrode 22 isfurther included. Here, the light incident surface of the semiconductorsubstrate 70 is defined as an above side, and the opposite side of thesemiconductor substrate 70 is defined as a below side. A wiring layer 62including a plurality of wirings is disposed below the semiconductorsubstrate 70.

The semiconductor substrate 70 further includes at least a floatingdiffusion layer FD₁ and an amplification transistor TR1 _(amp) formingthe control unit, and the first electrode 21 is connected to the gatesection of the floating diffusion layer FD₁ and the amplificationtransistor TR1 _(amp). The semiconductor substrate 70 further includes areset transistor TR1 _(rst) and select transistor TR1 _(sel) forming thecontrol unit. The floating diffusion layer FD₁ is connected to asource/drain region of one side of the reset transistor TR1 _(rst), anda source/drain region of one side of the amplification transistor TR1_(amp) is connected to a source/drain region of one side of the selecttransistor TR1 _(sel), and a source/drain region of another side of theselect transistor TR1 _(sel) is connected to the signal line VSL₁. Theabove-described amplification transistor TR1 _(amp), reset transistorTR1 _(rst), and select transistor TR1 _(sel) form the drive circuit.

Specifically, the imaging element of Embodiment 1 is a back surfaceilluminated type imaging element, and has a structure in which afirst-type green imaging element of Embodiment 1 (hereinafter, referredto as “first imaging element”) having a first-type green photoelectricconversion layer which absorbs green light and having sensitivity togreen light, a second-type conventional blue imaging element(hereinafter, referred to as “second imaging element”) having asecond-type photoelectric conversion layer which absorbs blue light andhaving sensitivity to blue light, and a second-type conventional redimaging element (hereinafter, referred to as “third imaging element”)having a second-type photoelectric conversion layer which absorbs redlight and having sensitivity to red light are stacked. Here, the redimaging element (third imaging element) and the blue imaging element(second imaging element) are provided in the semiconductor substrate 70,and the second imaging element is located more closer to the lightincident side as compared to the third imaging element. Furthermore, thegreen imaging element (first imaging element) is provided above the blueimaging element (second imaging element). One pixel is formed by thestacked structure of the first imaging element, the second imagingelement, and the third imaging element. No color filter layer isprovided.

In the first imaging element, the first electrode 21, the charge storageelectrode 24, the transfer control electrode 25 are formed apart fromeach other on the interlayer insulating layer 81. The interlayerinsulating layer 81, the charge storage electrode 24, and the transfercontrol electrode 25 are covered with an insulating layer 82. Thephotoelectric conversion layer 23 is formed on the insulating layer 82and the second electrode 22 is formed on the photoelectric conversionlayer 23. An insulating layer 83 is formed on the entire surfaceincluding the second electrode 22, and an on-chip microlens 14 isprovided on the insulating layer 83. No color filter layer is provided.The first electrode 21, the charge storage electrode 24, the transfercontrol electrode 25, and the second electrode 22 include a transparentelectrode including ITO (work function: about 4.4 eV), for example. Thephotoelectric conversion layer 23 includes a layer containing at least aknown organic photoelectric conversion material sensitive to green light(e.g., organic material such as rhodamine-based pigment,melacyanine-based pigment, quinacridone, or the like). The interlayerinsulating layer 81 and the insulating layers 82 and 83 include a knowninsulating material (e.g., SiO₂ or SiN). The photoelectric conversionlayer 23 and the first electrode 21 are connected by the connectionportion 67 provided on the insulating layer 82. The photoelectricconversion layer 23 extends in the connection portion 67. That is, thephotoelectric conversion layer 23 extends in an opening 85 provided inthe insulating layer 82 and is connected to the first electrode 21.

The charge storage electrode 24 and the transfer control electrode 25(the transfer control electrode segments 25SG₁ and 25SG₂) are connectedto the drive circuit. Specifically, the charge storage electrode 24 isconnected to a vertical drive circuit 112 forming the drive circuit viaa connection hole 66, a pad portion 64, and a wiring V_(OA) provided inthe interlayer insulating layer 81. Further, the transfer controlelectrode 25 is connected to a vertical drive circuit 112 forming thedrive circuit via a connection hole 68B, a pad portion 68A, and a wiringV_(OT) provided in the interlayer insulating layer 81.

The size of the charge storage electrode 24 is larger than that of thefirst electrode 21. When an area of the charge storage electrode 24 isdefined as S₁′ and an area of the first electrode 21 is defined as S₁,

it is preferable to satisfy 4≤S₁′/S₁,

but the present disclosure is not limited thereto, and in Embodiment 1,for example,

S₁′/S₁=8,

but the present disclosure is not limited thereto. Further, inEmbodiments 9 to 13 which will be described below, three photoelectricconversion unit segments 10′₁, 10′₂, and 10′₃ have the same size andhave the same planar shape.

An element separation region 71 is formed on the side of the firstsurface (front surface) 70A of the semiconductor substrate 70, and anoxide film 72 is formed on the first surface 70A of the semiconductorsubstrate 70. Moreover, a reset transistor TR1 _(rst), an amplificationtransistor TR1 _(amp), and select transistor TR1 _(sel) forming thecontrol unit of the first imaging element are provided on the side ofthe first surface of the semiconductor substrate 70, and a firstfloating diffusion layer FD₁ is further provided.

The reset transistor TR1 _(rst) includes a gate section 51, a channelforming region 51A, and source/drain regions 51B and 51C. The gatesection 51 of the reset transistor TR1 _(rst) is connected to the resetline RST₁, and the source/drain region 51C of one side of the resettransistor TR1 _(rst) also functions as the first floating diffusionlayer FD₁, and the source/drain region 51B of another side is connectedto the power supply V_(DD).

The first electrode 21 is connected to a source/drain region 51C (firstfloating diffusion layer FD₁) of one side of the reset transistor TR1_(rst) via a connection hole 65 and a pad portion 63 provided in theinterlayer insulating layer 81, a contact hole portion 61 formed in thesemiconductor substrate 70 and the interlayer insulating layer 76, andthe wiring layer 62 formed in the interlayer insulating layer 76.

The amplification transistor TR1 _(sel) includes a gate section 52, achannel forming region 52A, and source/drain regions 52B and 52C. Thegate section 52 is connected to the first electrode 21 and thesource/drain region 51C (first floating diffusion layer FD₁) of one sideof the reset transistor TR1 _(rst) through the wiring layer 62.Furthermore, the source/drain region 52B of one side is connected topower supply V_(DD).

The select transistor TR1 _(sel) includes a gate section 53, a channelforming region 53A, and source/drain regions 53B and 53C. The gatesection 53 is connected to a select line SEL₁. Furthermore, thesource/drain region 53B of one side shares a region with thesource/drain region 52C of another side forming the amplificationtransistor TR1 _(amp) and the source/drain region 53C is connected to asignal line (data output line) VSL₁ (117).

The second imaging element includes an n-type semiconductor region 41provided in the semiconductor substrate 70 as a photoelectric conversionlayer. A gate section 45 of a transfer transistor TR2 _(trs) includingthe vertical transistor extends to the n-type semiconductor region 41and is connected to a transfer gate line TG₂. Furthermore, a secondfloating diffusion layer FD₂ is provided in a region 45C of thesemiconductor substrate 70 near the gate section 45 of the transfertransistor TR2 _(trs). Charges stored in the n-type semiconductor region41 are read out to the second floating diffusion layer FD₂ via atransfer channel formed along the gate section 45.

In the second imaging element, a reset transistor TR2 _(rst), anamplification transistor TR2 _(amp) and a select transistor TR2 _(sel)forming the control unit of the second imaging element are furtherprovided on the first surface side of the semiconductor substrate 70.

The reset transistor TR2 _(rst) includes the gate section, the channelforming region, and the source/drain region. The gate section of thereset transistor TR2 _(rst) is connected to a reset line RST₂, and asource/drain region of one side of the reset transistor TR2 _(rst) isconnected to the power supply V_(DD), and a source/drain region ofanother side also functions as the second floating diffusion layer FD₂.

The amplification transistor TR2 _(amp) includes the gate section, thechannel forming region, and the source/drain region. The gate section isconnected to a source/drain region (second floating diffusion layer FD₂)of another side of the reset transistor TR2 _(rst). Furthermore, asource/drain region of one side is connected to the power supply V_(DD).

The select transistor TR2 _(sel) includes the gate section, the channelforming region, and the source/drain region. The gate section isconnected to a select line SEL₂. Furthermore, a source/drain region ofone side shares a region with a source/drain region of another sideforming the amplification transistor TR2 _(amp), and a source/drainregion of another side is connected to a signal line (data output line)VSL₂.

The third imaging element has an n-type semiconductor region 43 providedin the semiconductor substrate 70 as a photoelectric conversion layer. Agate section 46 of a transfer transistor TR3 _(trs) is connected to atransfer gate line TG₃. Furthermore, a third floating diffusion layerFD₃ is provided in a region 46C of the semiconductor substrate 70 nearthe gate section 46 of the transfer transistor TR3 _(trs). Chargesstored in the n-type semiconductor region 43 are read out to the thirdfloating diffusion layer FD₃ via a transfer channel 46A formed along thegate section 46.

In the third imaging element, a reset transistor TR3 _(rst), anamplification transistor TR3 _(amp), and a select transistor TR3 _(sel)forming the control unit of the third imaging element are furtherprovided on the first surface side of the semiconductor substrate 70.

The reset transistor TR3 _(rst) includes the gate section, the channelforming region, and the source/drain region. The gate section of thereset transistor TR3 _(rst) is connected to a reset line RST₃, and asource/drain region of one side of the reset transistor TR3 _(rst) isconnected to the power supply V_(DD), and a source/drain region ofanother side also functions as the third floating diffusion layer FD₃.

The amplification transistor TR3 _(amp) includes the gate section, thechannel forming region, and the source/drain region. The gate section isconnected to the source/drain region (third floating diffusion layerFD₃) of another side of the reset transistor TR3 _(rst). Furthermore, asource/drain region of one side is connected to the power supply V_(DD).

The select transistor TR3 _(sel) includes the gate section, the channelforming region, and the source/drain region. The gate section isconnected to a select line SEL₃. Furthermore, a source/drain region ofone side shares a region with a source/drain region of another sideforming the amplification transistor TR3 _(amp), and a source/drainregion of another side is connected to a signal line (data output line)VSL₃.

Reset lines RST₁, RST₂, and RST₃, select lines SEL₁, SEL₂, and SEL₃, andtransfer gate lines TG₂ and TG₃ are connected to the vertical drivecircuit 112 forming the drive circuit, and the signal lines (data outputlines) VSL₁, VSL₂, and VSL₃ are connected to a column signal processingcircuit 113 forming the drive circuit.

A p⁺ layer 44 is provided between the n-type semiconductor region 43 andthe surface 70A of the semiconductor substrate 70 to suppress generationof dark current. A p⁺ layer 42 is formed between the n-typesemiconductor region 41 and the n-type semiconductor region 43, and apart of the side surface of the n-type semiconductor region 43 issurrounded by the p⁺ layer 42. A p⁺ layer 73 is formed on the side of aback surface 70B of the semiconductor substrate 70, and an HfO₂ film 74and an insulating material film 75 are formed in a portion of thesemiconductor substrate 70 where the contact hole portion 61 is to beformed from the p⁺ layer 73. In the interlayer insulating layer 76,wirings are formed over a plurality of layers, but are omitted fromillustration.

The HfO₂ film 74 is a film having a negative fixed charge, andgeneration of dark current can be suppressed by providing such a film.Instead of the HfO₂ film, an aluminum oxide (Al₂O₃) film, a zirconiumoxide (ZrO₂) film, a tantalum oxide (Ta₂O₅) film, a titanium oxide(TiO₂) film, a lanthanum oxide (La₂O₃) film, a praseodymium oxide(Pr₂O₃) film, a cerium oxide (CeO₂) film, a neodymium oxide (Nd₂O₃)film, a promethium oxide (Pm₂O₃) film, a samarium oxide (Sm₂O₃) film, aeuropium oxide (Eu₂O₃) film, a gadolinium oxide (Gd₂O₃) film, a terbiumoxide (Tb₂O₃) film, a dysprosium oxide (Dy₂O₃) film, a holmium oxide(Ho₂O₃) film, a thulium oxide (Tm₂O₃) film, a ytterbium oxide (Yb₂O₃)film, a lutetium oxide (Lu₂O₃) film, a yttrium oxide (Y₂O₃) film, ahafnium nitride film, an aluminum nitride film, a hafnium oxynitridefilm, and an aluminum oxynitride film may be used. Examples of the filmforming method of these films include a CVD method, a PVD method, and anALD method.

Hereinafter, the operation of the stacked-type imaging elements (firstimaging element) of Embodiment 1 will be described with reference toFIGS. 9, 10, and 11. Note that FIGS. 9, 10, and 11 are different invalues of a potential applied to the charge storage electrode 24 and apotential at point P_(D). Here, the potential of the first electrode 21is higher than the potential of the second electrode 22. That is, forexample, the first electrode 21 is set to a positive potential and thesecond electrode 22 is set to a negative potential, and photoelectricconversion is performed in the photoelectric conversion layer 23, andgenerated electrons are read out to the floating diffusion layer. Thisalso applies to other embodiments.

The reference symbols used in FIGS. 9, 10, 11, FIG. 35 in Example 9, andFIG. 36 are as follows.

P_(A): a potential at point P_(A) of the photoelectric conversion layer23 opposite to the region located between the charge storage electrode24 or the transfer control electrode (charge transfer electrode) 25 andthe first electrode 21

P_(B): a potential at point P_(B) in a region of the photoelectricconversion layer 23 opposite to the charge storage electrode 24

P_(C1): a potential at point P_(C1) in a region of the photoelectricconversion layer 23 opposite to the charge storage electrode segment 24A

P_(C2): a potential at point P_(C2) in a region of the photoelectricconversion layer 23 opposite to the charge storage electrode segment 24B

P_(C3): a potential at point P_(C3) in a region of the photoelectricconversion layer 23 opposite to the charge storage electrode segment 24C

P_(D): a potential at point P_(D) in a region of the photoelectricconversion layer 23 opposite to the transfer control electrode (chargetransfer electrode) 25

FD: a potential of the first floating diffusion layer FD₁

V_(OA): a potential of the charge storage electrode 24

V_(OA-A): a potential of the charge storage electrode segment 24A

V_(OA-B): a potential of the charge storage electrode segment 24B

V_(OA-C): a potential of the charge storage electrode segment 24C

V_(OT): a potential of the transfer control electrode (charge transferelectrode) 25

RST: a potential of the gate section 51 of the reset transistor TR1_(rst)

V_(DD): a potential of the power supply

VSL₁: the signal line (data output line) VSL₁

TR1 _(rst): the reset transistor TR1 _(rst) TR1 _(amp): theamplification transistor TR1 _(amp) TR1 _(sel): the select transistorTR1 _(sel)

In Embodiment 1, during a charge storage period, a potential V₁₁ isapplied from the drive circuit to the first electrode 21, a potentialV₁₂ is applied from the drive circuit to the charge storage electrode24, a potential V₁₃ is applied from the drive circuit to the transfercontrol electrode 25, and a charge is stored in the photoelectricconversion layer 23,

during a charge transfer period, a potential V₂₁ is applied from thedrive circuit to the first electrode 21, a potential V₂₂ is applied fromthe drive circuit to the charge storage electrode 24, a potential V₂₃ orthe potential V₁₃ is applied from the drive circuit to the transfercontrol electrode 25, the charge stored in the photoelectric conversionlayer 23 is read to the control unit via the first electrode 21. Becausea potential of the first electrode 21 is higher than a potential of thesecond electrode 22,

V₁₂>V₁₃ and V₂₂≤V₂₃≤V₂₁ (preferably V₂₂<V₂₃<V₂₁)_(f) or

V₁₂>V₁₃ and V₂₂≤V₁₃≤V₂₁ (preferably V₂₂<V₁₃<V₂₁).

Further, in a case where the potential of the first electrode is higherthan the potential of the second electrode, it is desirable that V₁₂≥V₁₁(preferably V₁₂=V₁₁). In a case where the potential of the secondelectrode is higher than the potential of the first electrode, it isdesirable that V₁₁≤V₁₂ (preferably V₁₁=V₁₂).

Specifically, in the charge storage period, the potential V₁₁ is appliedto the first electrode 21, the potential V₁₂ is applied to the chargestorage electrode 24, and the potential V₁₃ is applied to the transfercontrol electrode 25 from the drive circuit. Photoelectric conversionoccurs in the photoelectric conversion layer 23 by light incident on thephotoelectric conversion layer 23. The holes generated by thephotoelectric conversion are sent from the second electrode 22 to thedrive circuit via a wiring V_(OU). On the other hand, since thepotential of the first electrode 21 is higher than the potential of thesecond electrode 22, that is, for example, a positive potential isapplied to the first electrode 21 and a negative potential is applied tothe second electrode 22, and thus V₁₂>V₁₃ (for example, V₁₂≥V₁₁>V₁₃ orV₁₁>V₁₂>V₁₃). As a result, the electrons generated by the photoelectricconversion are attracted to the charge storage electrode 24 and stop atthe region of the photoelectric conversion layer 23 opposite to thecharge storage electrode 24. That is, charges are stored in thephotoelectric conversion layer 23. Since V₁₂>V₁₃, electrons generated inthe photoelectric conversion layer 23 surely can be prevented frommoving toward the first electrode 21. As the photoelectric conversiontime elapses, the potential in the region of the photoelectricconversion layer 23 opposite to the charge storage electrode 24 becomesa more negative value.

A reset operation is performed at the latter stage of the charge storageperiod. As a result, the potential of the first floating diffusion layerFD₁ is reset such that the potential of the first floating diffusionlayer FD₁ becomes the potential V_(DD) of the power supply.

After the reset operation is completed, charges are read out. That is,in the charge transfer period, the potential V₂₁ is applied to the firstelectrode 21, the potential V₂₂ is applied to the charge storageelectrode 24, and the potential V₂₃ or the potential V₁₃ is applied tothe transfer control electrode 25, from the drive circuit. Here, it isassumed that V₂₂≤V₂₃≤V₂₁ and preferably V₂₂<V₂₃<V₂₁ (see FIGS. 9 and10). Alternatively, it is assumed that V₂₂≤V₁₃≤V₂₁ and preferablyV₂₂<V₁₃<V₂₁ (see FIG. 11). That is, an embodiment in which the potentialof the transfer control electrode 25 is fixed during the charge storageperiod, the reset operation, and the charge transfer period and apotential which is applied to the charge storage electrode 24 is movedvertically during the charge storage period and the charge transferperiod may be adopted. Further, as a result, electrons that have stoppedin the region of the photoelectric conversion layer 23 opposite to thecharge storage electrode 24 are reliably read out to the first electrode21 and further to the first floating diffusion layer FD₁. That is, thecharges stored in the photoelectric conversion layer 23 are read out tothe control unit.

Thus, a series of operations including charge storage, reset operation,charge transfer, and the like is completed.

The operations of the amplification transistor TR1 _(amp) and the selecttransistor TR1 _(sel) after the electrons are read out to the firstfloating diffusion layer FD₁ are the same as those of the conventionaltransistors. Further, for example, a series of operations such as chargestorage, reset operation, and charge transfer of the second imagingelement and the third imaging element are similar to a series ofconventional operations such as charge storage, reset operation, andcharge transfer. Furthermore, the reset noise of the first floatingdiffusion layer FD₁ can be removed by a correlated double sampling (CDS)process as in the related art.

As described above, in Embodiment 1, a charge storage electrode which isdisposed to be spaced apart from the first electrode and disposedopposite to the photoelectric conversion layer via an insulating layeris included, and thus, when the photoelectric conversion layer isirradiated with light such that photoelectric conversion occurs in thephotoelectric conversion layer, a type of capacitor is formed by thephotoelectric conversion layer, the insulating layer, and the chargestorage electrode, and charges can be stored in the photoelectricconversion layer. Therefore, at the start of exposure, it becomespossible to completely deplete the charge storage portion and removecharges. As a result, it is possible to suppress occurrence of aphenomenon in which kTC noise increases, random noise worsens, anddegradation of the image quality is caused. Furthermore, since all thepixels can be reset simultaneously, a so-called global shutter functioncan be realized.

In addition, the transfer control electrode disposed adjacent to thecharge storage electrode and the first electrode via the insulatinglayer and disposed opposite to the photoelectric conversion layer viathe insulating layer is further included. Therefore, when the chargesstored in the photoelectric conversion layer are transferred to thefirst electrode, high controllability can be attained. In addition,since it is not necessary to decrease the area of the charge storageelectrode in the disposition of the transfer control electrode, it ispossible to suppress occurrence of the problem that an amount ofsaturated charges in the photoelectric conversion layer decreases orsensitivity degrades.

FIG. 64 shows a conceptual diagram of a solid-state imaging apparatus ofEmbodiment 1. The solid-state imaging apparatus 100 of Embodiment 1includes an imaging region 111 in which the stacked-type imagingelements 101 are arranged in a two-dimensional array, a vertical drivecircuit 112 as a drive circuit (peripheral circuit), a column signalprocessing circuit 113, a horizontal drive circuit 114, an outputcircuit 115, a drive control circuit 116, etc. These circuits may beformed by well-known circuits, and moreover, may be formed by usingother circuit configurations (e.g., various circuits used in aconventional CCD solid-state imaging apparatus or CMOS solid-stateimaging apparatus). In FIG. 64, the reference number “101” of thestacked-type imaging element 101 is only shown in one row.

The drive control circuit 116 generates a clock signal and a controlsignal which are the basis of the operations of the vertical drivecircuit 112, the column signal processing circuit 113, and thehorizontal drive circuit 114 on the basis of a vertical synchronizationsignal, a horizontal synchronization signal, and a master clock.Further, the generated clock signal and control signal are input to thevertical drive circuit 112, the column signal processing circuit 113,and the horizontal drive circuit 114.

The vertical drive circuit 112 includes, for example, a shift register,and selectively scans each stacked-type imaging element 101 in theimaging region 111 in the vertical direction in units of rows. Further,a pixel signal (image signal) based on the current (signal) generatedaccording to the amount of light received by each stacked-type imagingelement 101 is sent to the column signal processing circuit 113 via thesignal lines (data output lines) 117 and VSL.

For example, the column signal processing circuit 113 is arranged foreach column of the stacked-type imaging element 101, and signalprocessing for noise removal and signal amplification is performed onimage signal output from the stacked-type imaging element 101 for onerow in each imaging element by a signal from a black reference pixel(not shown, but formed around the effective pixel area). A horizontalselection switch (not shown) is provided in the output stage of thecolumn signal processing circuit 113 so as to be connected to thehorizontal signal line 118.

The horizontal drive circuit 114 includes, for example, a shiftregister, and sequentially selects each of the column signal processingcircuits 113 by sequentially outputting horizontal scanning pulses, andoutputs signals from each of the column signal processing circuits 113to the horizontal signal line 118.

The output circuit 115 is performs signal processing on signalssequentially supplied from each of the column signal processing circuits113 via the horizontal signal line 118 and outputs the signals.

As shown in FIG. 12 showing an equivalent circuit diagram of a modifiedexample of the imaging element of Embodiment 1 and in FIG. 13 showingthe schematic arrangement of the first electrode, the charge storageelectrode, and the transfer control electrode, and the transistorforming the control unit, the source/drain region 51B of another side ofthe reset transistor TR1 _(rst) may be grounded instead of beingconnected to the power supply V_(DD).

The imaging element of Embodiment 1 may be manufactured by, for example,the following method. That is, first, an SOI substrate is prepared.Then, a first silicon layer is formed on the surface of the SOIsubstrate by an epitaxial growth method, and a p⁺ layer 73 and an n-typesemiconductor region 41 are formed in the first silicon layer. Next, asecond silicon layer is formed on the first silicon layer by anepitaxial growth method, and the element separation region 71, the oxidefilm 72, the p⁺ layer 42, the n-type semiconductor region 43, and the p⁺layer 44 are formed on the second silicon layer. Furthermore, varioustransistors and the like forming the control unit of the imaging elementare formed on the second silicon layer, and the wiring layer 62, aninterlayer insulating layer 76, and various wirings are further formedthereon, and then the interlayer insulating layer 76 and the supportingsubstrate (not shown) are bonded to each other. Thereafter, the SOIsubstrate is removed to expose the first silicon layer. Further, thesurface of the second silicon layer corresponds to the surface 70A ofthe semiconductor substrate 70, and the surface of the first siliconlayer corresponds to the back surface 70B of the semiconductor substrate70. Furthermore, the first silicon layer and the second silicon layerare collectively referred to as the semiconductor substrate 70. Next, anopening for forming the contact hole portion 61 is formed on the side ofthe back surface 70B of the semiconductor substrate 70, and the HfO₂film 74, the insulating material film 75, and the contact hole portion61 are formed, and the pad portions 63, 64, and 68A, the interlayerinsulating layer 81, the connection holes 65, 66, and 68B, the firstelectrode 21, the charge storage electrode 24, the transfer controlelectrode 25, and the insulating layer 82 are further formed. Next, theconnection portion 67 is opened to form the photoelectric conversionlayer 23, the second electrode 22, the insulating layer 83, and theon-chip microlens 14. Accordingly, the imaging element of Embodiment 1may be obtained.

Furthermore, although illustration is omitted, the insulating layer 82can have a configuration of two layers, an insulating lower layer and aninsulating upper layer. That is, it is only required that the insulatinglower layer is formed at least above the charge storage electrode 24, ina region between the charge storage electrode 24 and the first electrode21, and in a region between the transfer control electrode 25 and thefirst electrode 21 (more specifically, the insulating lower layer isformed above the interlayer insulating layer 81 including the chargestorage electrode 24), a flattening treatment is performed on theinsulating lower layer, and subsequently the insulating upper layer isformed on the insulating lower layer, the charge storage electrode 24,and the transfer control electrode 25, and the flattening of theinsulating layer 82 can thereby be reliably attained. Further, theconnection portion 67 may be opened to the insulating layer 82 obtainedin this way.

Embodiment 2

Embodiment 2 is a modification of Embodiment 1. As schematic plan viewsof the first electrode, the charge storage electrode, and the transfercontrol electrode included in the imaging element of Embodiment 2 areshown in FIGS. 14A and 14B, the transfer control electrode 25 surroundsthe charge storage electrode 24 in a frame form. Further, when two sidesof the charge storage electrode 24 on both sides of the opposite region24 a are a first side 24S₁ and a second side 24S₂, a length of the firstside 2451 is L₁, a length of the second side 24S₂ is L₂, a distance LL₁′between the first electrode 21 and an end of a portion of a transfercontrol electrode 251′ along the first side 2451 is in the range of0.02×L₁ to 0.5×L₁ (specifically, 0.2×L₁) and a distance LL₂′ between thefirst electrode 21 and an end of a portion of a transfer controlelectrode 252′ along the second side 24S₂ is in the range of 0.02×L₂ to0.5×L₂ (specifically, 0.2×L₂). Further, to clarify the first electrode21, the charge storage electrode 24, and the transfer control electrode25 in FIG. 14B, oblique lines are given in the first electrode 21, thecharge storage electrode 24, and the transfer control electrode 25.

Even in Embodiment 2, as shown in FIG. 14B, the transfer controlelectrode 25 is shared by the plurality of imaging elements. Further, itis considered that the potential of the transfer control electrode 25 isconstant (V₁₃) during the charge storage period, the reset operation,and the charge transfer period. That is, after the reset operation iscompleted, charges are read out. The potential V₂₁ is applied to thefirst electrode 21, the potential V₂₂ is applied to the charge storageelectrode 24, and the potential V₁₃ is applied to the transfer controlelectrode 25, from the drive circuit. Here, it is assumed thatV₂₂≤V₁₃≤V₂₁ and preferably V₂₂<V₁₃<V₂₁ (see FIG. 11). As a result,electrons that have stopped in the region of the photoelectricconversion layer 23 opposite to the charge storage electrode 24 arereliably read out to the first electrode 21 and further to the firstfloating diffusion layer FD₁. That is, the charges stored in thephotoelectric conversion layer 23 are read out to the control unit.

Except for the above points, the configuration and structure of theimaging element of Embodiment 2 may be similar to those of the imagingelement or the solid-state imaging apparatus of Embodiment 1, and thusdetailed description will be omitted. Further, it is needless to saythat the modified example of Embodiment 1 shown in FIGS. 5A and 5B canalso be applied to Embodiment 2.

Embodiment 3

Embodiment 3 is also a modification of Embodiment 1. As schematic planviews of the first electrode, the charge storage electrode, and thetransfer control electrode included in the imaging element of Embodiment3 are shown in FIGS. 15A and 15B or 16, a planar shape of the chargestorage electrode 24 is a rectangle in the imaging element of Embodiment3. Further, the opposite region 24 a is located to border one side 24S₃of the charge storage electrode 24 and the transfer control electrode 25includes two transfer control electrode segments 25SG₁ and 25SG₂. Here,the first transfer control electrode segment 25SG₁ is adjacent to theopposite region 24 a and is opposite to the first electrode 21 and thefirst region 24AR₁ of the charge storage electrode bordering the oneside 24S₃ of the charge storage electrode 24 via the insulating layer82. The second transfer control electrode segment 25SG₂ is adjacent tothe opposite region 24 a and is opposite to the first electrode 21 andthe second region 24AR₂ of the charge storage electrode bordering oneside of the charge storage electrode 24 via the insulating layer 82.

Further, in the example shown in FIG. 15A, the transfer controlelectrode segments 25SG₁ and 25SG₂ are located between the chargestorage electrode 24 and the first electrode 21. Furthermore, in theexample shown in FIG. 15B, the transfer control electrode segments 25SG₁and 25SG₂ border the first region 24AR₁ of the charge storage electrodeand the second region 24AR₂ of the charge storage electrode, and borderthe first electrode 21. Moreover, in the example shown in FIG. 16, theopposite region 24 a protrudes from the one side 24S₃ of the chargestorage electrode 24 to the first electrode 21. The transfer controlelectrode segments 25SG₁ and 25SG₂ border the opposite region 24 a whichis a protrusion of the charge storage electrode 24 and border the firstregion 24AR₁ of the charge storage electrode and the second region 24AR₂of the charge storage electrode, and border the first electrode 21.

Except for the above points, the configuration and structure of theimaging element of Embodiment 3 may be similar to those of the imagingelement or the solid-state imaging apparatus of Embodiment 1, and thusdetailed description will be omitted.

Embodiment 4

Embodiment 4 relates to a solid-state imaging apparatus according to thesecond aspect of the present disclosure. The imaging element or thestacked-type imaging element included in the solid-state imagingapparatus of Embodiment 4 has the same configuration and structure asthe imaging element or the stacked-type imaging element described inEmbodiments 1 to 3. That is, the solid-state imaging apparatus ofEmbodiment 4 includes the plurality of imaging element blocks formed bythe plurality of imaging elements described in Embodiments 1 to 3, andthe first electrode 21 is shared by the plurality of imaging elementsforming the imaging element block.

Further, a schematic arrangement view of the first electrode 21, thecharge storage electrode 24, and the transfer control electrode 25 isshown in FIGS. 17, 18, 19, 20, 21, and 22. In examples shown in FIG. 17or FIGS. 19 and 21 to be described below, the solid-state imagingapparatus includes the imaging element described in Embodiment 1. Inexamples shown in FIG. 18 or FIGS. 20 and 22 to be described below, thesolid-state imaging apparatus includes the imaging element described inEmbodiment 2. That is, the transfer control electrode 25 surrounds thecharge storage electrode 24 in a frame form and the transfer controlelectrode 25 is shared by the adjacent imaging elements. Further, in theexamples shown in FIGS. 17 and 18, the plurality of imaging elements isarrayed in a 2-dimensional matrix form and the imaging element block isformed by 2×2 imaging elements. Furthermore, in the examples illustratedin FIGS. 19, 20, 21, and 22, the plurality of imaging elements isarrayed in a 2-dimensional matrix form and the imaging element block isformed by two imaging elements adjacent in a diagonal direction.Further, in FIGS. 17 and 18, the imaging element block is surrounded bya dotted line. Suffixes attached to the first electrode 21, the chargestorage electrode 24, and the transfer control electrode 25 are used todistinguish the first electrode 21, the charge storage electrode 24, andthe transfer control electrode 25. Further, one on-chip microlens (notshown) is disposed above one imaging element. Further, in FIGS. 17, 18,19, 20, 21, and 22, to clarify the transfer control electrode 25,oblique lines are given to the transfer control electrode 25.

Here, in Embodiment 4, one floating diffusion layer is provided in eachimaging element block. Further, the plurality of imaging elementsforming the imaging element block can share one floating diffusion layerby suitably controlling a timing of the charge transfer period.Furthermore, the plurality of imaging elements forming the imagingelement block shares one contact hole portion.

That is, in the examples shown in FIGS. 17 and 18, four imaging elements(in FIGS. 17 and 18, charge storage electrodes 24 _(m,1), 24 _(m,2), 24_(m,3), and 24 _(m,4) are shown) form one imaging element block. Thefour imaging elements share one first electrode 21 _(m), one contacthole portion, and one floating diffusion layer. Here, m is a positiveinteger.

Further, in the examples shown in FIGS. 19 and 20, two imaging elements(in FIGS. 19 and 20, charge storage electrodes 24 _(m,n+1), 24 _(m+1, n)are shown) form one imaging element block. The two imaging elementsshare one first electrode 21 _(m,n), one contact hole portion, and onefloating diffusion layer. Here, m is a positive integer, and n is an oddnumber.

Further, in the examples shown in FIGS. 21 and 22, two imaging elements(in FIGS. 21 and 22, the charge storage electrodes 24 _(m,n+1), 24_(m+1, n) are shown) form one imaging element block. The two imagingelements share one first electrode 21 _(m,n), one contact hole portion,and one floating diffusion layer. Here, m is an odd number, and n is apositive integer.

Thus, the solid-state imaging apparatus of Embodiment 4 has theconfiguration and structure substantially similar to those of thesolid-state imaging apparatus described in Embodiments 1 to 3 exceptthat the first electrode 21 is shared by a plurality of the imagingelements forming the imaging element block.

Hereinafter, for example, the operation of the imaging element blockincluding a first electrode 21 ₁₁ and two two charge storage electrodes24 ₁₂ and 24 ₂₁ shown in FIG. 20 will be described.

In the charge storage period, the potential V_(a) (=V₁₁) is applied tothe first electrode 21 ₁₁, the potential V₁₃ is applied to the chargestorage electrodes 24 ₁₂ and 24 ₂₁, and the potential V₁₂ is applied tothe second electrode 22 (not illustrated), from the drive circuit.Photoelectric conversion occurs in the photoelectric conversion layer 23by light incident on the photoelectric conversion layer 23. The holesgenerated by the photoelectric conversion are sent from the secondelectrode 22 to the drive circuit via a wiring V_(OU). On the otherhand, since the potential of the first electrode 21 ₁₁ is higher thanthe potential of the second electrode 22, that is, for example, apositive potential is applied to the first electrode 21 ₁₁ and anegative potential V_(a′) (=V₁₂) is applied to the second electrode 22,and thus V_(a′)>13. As a result, the electrons generated by thephotoelectric conversion are attracted to the charge storage electrodes24 ₁₂ and 24 ₂₁ and stop at the region of the photoelectric conversionlayer 23 opposite to the charge storage electrodes 24 ₁₂ and 24 ₂₁. Thatis, charges are stored in the photoelectric conversion layer 23. SinceV_(a)′>₁₃, electrons generated in the photoelectric conversion layer 23do not move toward the first electrode 21 ₁₁. As the photoelectricconversion time elapses, the potential in the region of thephotoelectric conversion layer 23 opposite to the charge storageelectrodes 24 ₁₂ and 24 ₂₁ becomes a more negative value.

A reset operation is performed at the latter stage of the charge storageperiod. As a result, the potential of the first floating diffusion layeris reset, and the potential of the first floating diffusion layerbecomes the potential V_(DD) of the power supply.

After the reset operation is completed, charges are read out. That is,in the charge transfer period, the potential V_(b) (=V₁₂) is applied tothe first electrode 21 ₁₁, a potential v_(12-b) is applied to the chargestorage electrode 24 ₁₂, a potential v_(21-b) is applied to the chargestorage electrode 24 ₂₁, and the potential V_(b)′ (=V₂₂) is applied tothe second electrode 22 (not shown), from the drive circuit. Here,v_(12-b) (=V₁₃)<V_(b)<v_(21-b). The potential of the transfer controlelectrode 25 is considered to be constant (V₁₃) during the chargestorage period, the reset operation, and the charge transfer period. Asa result, electrons that have stopped in the region of the photoelectricconversion layer 23 opposite to the charge storage electrode 24 ₁₂ areread out to the first electrode 21 ₁₁ and further to the first floatingdiffusion layer. That is, the charges stored in the region of thephotoelectric conversion layer 23 opposite to the charge storageelectrode 24 ₁₂ are read out to the control unit. When the reading iscompleted, v_(21-b) (=V₁₃)≤v_(12-b)<V_(b) is set. Further, v_(21-b)(=V₁₃)<V_(b)<v_(12-b) may be set. As a result, electrons that havestopped in the region of the photoelectric conversion layer 23 oppositeto the charge storage electrode 24 ₂₁ are read out to the firstelectrode 21 ₁₁ and further to the first floating diffusion layer.Further, when the reading of the charges stored in the region of thephotoelectric conversion layer 23 opposite to the charge storageelectrode 24 ₁₂ to the control unit is completed, the potential of thefirst floating diffusion layer may be reset.

FIG. 23A shows readout driving examples in the imaging element block ofEmbodiment 4.

[Step A]

Auto zero signal input to comparator

[Step B]

Reset operation of one shared floating diffusion layer

[Step C]

P-phase readout in imaging element corresponding to charge storageelectrode 24 ₁₂ and charge movement to first electrode 21 ₁₁

[Step D]

D-phase readout in imaging element corresponding to charge storageelectrode 24 ₁₂ and charge movement to first electrode 21 ₁₁

[Step E]

Reset operation of one shared floating diffusion layer

[Step F]

Auto zero signal input to comparator

[Step G]

P-phase readout in imaging element corresponding to charge storageelectrode 24 ₂₁ and charge movement to first electrode 21 ₁₁

[Step H]

D-phase readout in imaging element corresponding to charge storageelectrode 24 ₂₁ and charge movement to first electrode 21 ₁₁

Signals from two imaging elements corresponding to the charge storageelectrode 24 ₁₂ and charge storage electrode 24 ₂₁ are read out inaccordance with the flow described above. On the basis of the correlateddouble sampling (CDS) processing, the difference between the P-phasereadout in [Step C] and the D-phase readout in [Step D] is a signal fromthe imaging element corresponding to the charge storage electrode 24 ₁₂,and the difference between the P-phase readout in [Step G] and theD-phase readout in [Step H] is a signal from the imaging elementcorresponding to the charge storage electrode 24 ₂₁.

Further, the operation of [Step E] may be omitted (see FIG. 23B).Furthermore, the operation of [Step F] may be omitted, and in this case,further, [Step G] can be omitted (see FIG. 23C), and a differencebetween the P-phase readout in [Step C] and the D-phase readout in [StepD] is a signal from the imaging element corresponding to the chargestorage electrode 24 ₁₂, and a difference between the D-phase readout in[Step D] and the D-phase readout in [Step H] is a signal from theimaging element corresponding to the charge storage electrode 24 ₂₁.

In the solid-state imaging apparatus of Embodiment 4, the firstelectrode is shared by a plurality of the imaging elements forming theimaging element block, and thus the configuration and structure of apixel area in which a plurality of imaging elements is arranged can besimplified and miniaturized. Further, a plurality of imaging elementsprovided for one floating diffusion layer may include a plurality of thefirst-type imaging elements or may include at least one first-typeimaging element and one or two or more second-type imaging elements.

Embodiment 5

Embodiment 5 is a modification of Embodiment 4. In the solid-stateimaging apparatus of Embodiment 5 in which a disposition state of thefirst electrode 21 and the charge storage electrode 24 is schematicallyshown in FIG. 24, an imaging element block is formed by two imagingelements adjacent in an imaging horizontal direction. Further, oneon-chip microlens 14 (shown by a dotted line) is disposed above theimaging element block. Further, in FIG. 24, to clarify the transfercontrol electrode 25, oblique lines are given to the transfer controlelectrode 25.

For example, the photoelectric conversion layers corresponding to thecharge storage electrodes 241 forming the imaging element block havehigh sensitivity to incident light from obliquely upper right in thedrawing. Further, the photoelectric conversion layers corresponding tothe charge storage electrodes 242 forming the imaging element block havehigh sensitivity to incident light from obliquely upper left in thedrawing. Accordingly, for example, it is possible to acquire animage-plane phase difference signal by combining an imaging elementhaving the charge storage electrode 241 and an imaging element havingthe charge storage electrode 242. Furthermore, when a signal from animaging element having the charge storage electrode 241 and a signalfrom an imaging element having the charge storage electrode 242 areadded, one imaging element may be formed by a combination of theseimaging elements.

Embodiment 6

Embodiment 6 is the modification of Embodiments 1 to 5. The imagingelement of Embodiment 6 schematically shown in FIG. 25 is front-surfaceilluminated type imaging element, and has a structure in which threeimaging elements including a first-type green imaging element ofEmbodiments 1 to 5 (first imaging element) having a first-type greenphotoelectric conversion layer which absorbs green light and havingsensitivity to green light, a second-type conventional blue imagingelement (second imaging element) having a second-type blue photoelectricconversion layer which absorbs blue light and having sensitivity to bluelight, and a second-type conventional red imaging element (third imagingelement) having a second-type red photoelectric conversion layer whichabsorbs red light and having sensitivity to red light, are stacked.Here, the red imaging element (third imaging element) and the blueimaging element (second imaging element) are provided in thesemiconductor substrate 70, and the second imaging element is locatedmore closer to the light incident side as compared to the third imagingelement. Furthermore, the green imaging element (first imaging element)is provided above the blue imaging element (second imaging element).

Various transistors forming the control unit are provided on the surface70A of the semiconductor substrate 70, as in Embodiment 1. Thesetransistors may have the configuration and structure substantiallysimilar to those of the transistors described in Embodiment 1.Furthermore, the second imaging element and the third imaging elementare provided on the semiconductor substrate 70, and these imagingelements also may have the configuration and structure substantiallysimilar to those of the second imaging element and the third imagingelement described in Embodiment 1.

The interlayer insulating layer 81 is formed above the surface 70A ofthe semiconductor substrate 70, and the photoelectric conversion unit(first electrode 21, photoelectric conversion layer 23, second electrode22, charge storage electrode 24, transfer control electrode 25, and thelike) having charge storage electrode that forms the imaging element ofEmbodiments 1 to 5 are formed above the interlayer insulating layer 81.

As described above, the configuration and structure of the imagingelement of Embodiment 6 may be similar to those of the imaging elementof Embodiments 1 to 5 except for being the front-surface illuminatedtype imaging element and stacked-type imaging element, and thus detaileddescription will be omitted.

Embodiment 7

Embodiment 7 is the modification of Embodiments 1 to 6.

The imaging element of Embodiment 7 of which a schematic partial crosssectional view is shown in FIG. 26 is a back-surface illuminated typeimaging element, and has a structure in which the first imaging elementof the first type of Embodiments 1 to 5 and two second imaging elementsof the second type are stacked. Further, a modified example of theimaging element of Embodiment 7 of which a schematic partial crosssectional view is shown in FIG. 27 is a front-surface illuminated typeimaging element, and has a structure in which the first imaging elementof the first type of Embodiments 1 to 5 and two second imaging elementsof the second type are stacked. Here, the first imaging element absorbsprimary color of light, and the second imaging element absorbscomplementary color of light. Alternatively, the first imaging elementabsorbs white light and the second imaging element absorbs infraredlight.

A modified example of the imaging element of Embodiment 7 of which aschematic partial sectional view is shown in FIG. 28 is a back-surfaceilluminated type imaging element, and includes the first imaging elementof the first type of Embodiments 1 to 5. Furthermore, a modified exampleof the imaging element of Embodiment 7 of which a schematic partialsectional view is shown in FIG. 29 is a front-surface illuminated typeimaging element, and includes the first imaging element of the firsttype of Embodiments 1 to 5. Here, the first imaging element includesthree types of imaging elements including an imaging element absorbingred light, an imaging element absorbing green light, and an imagingelement absorbing blue light. An example of the arrangement of aplurality of the imaging elements may include a Bayer array. Colorfilter layers for performing spectral division of blue, green, and redare provided as necessary at the light incident side of each imagingelement.

Further, the form in which two photoelectric conversion units includingfirst-type charge storage electrode of Embodiments 1 to 5 are stacked(i.e., form in which two photoelectric conversion units including chargestorage electrode are stacked and control units of two photoelectricconversion units are provided on semiconductor substrate), or, the formin which three photoelectric conversion units including first-typecharge storage electrode of Embodiments 1 to 5 are stacked (i.e., formin which three photoelectric conversion units including charge storageelectrode are stacked and control units of three photoelectricconversion units are provided on semiconductor substrate) may be adoptedinstead of providing one first-type charge storage electrode ofEmbodiments 1 to 5. An example of a stacked structure of the first-typeimaging element and the second-type imaging element is exemplified inthe following table.

First type Second type Back surface 1 2 illuminated Green Blue + redtype and front 1 1 surface Primary color Complementary color illuminated1 1 type White Infrared ray 1 0 Blue or green or red 2 2 Green +infrared light Blue + red 2 1 Green + blue Red 2 0 White + infraredlight 3 2 Green + blue + red Blue-green (emerald color) + infrared light3 1 Green + blue + red Infrared light 3 0 Blue + green + red

Embodiment 8

Embodiment 8 is the modification of Embodiments 1 to 7, and relates tothe imaging element or the like having the charge discharge electrodeaccording to the present disclosure. A schematic partial sectional viewof a part of the imaging element of Embodiment 8 is shown in FIG. 30.

The imaging element of Embodiment 8 further includes a charge dischargeelectrode 26 that is connected to the photoelectric conversion layer 23via the connection portion 69 and is disposed to be spaced apart fromthe first electrode 21 and the charge storage electrode 24. Here, insome cases, the charge discharge electrode 26 may be disposed tosurround the first electrode 21, the charge storage electrode 24, andthe transfer control electrode 25 (i.e., in a frame form). The chargedischarge electrode 26 is connected to a pixel drive circuit forming adrive circuit. The photoelectric conversion layer 23 extends in theconnection portion 69. In other word, the photoelectric conversion layer23 extends in a second opening 86 provided in an insulating layer 82,and is connected to the charge discharge electrode 26. The chargedischarge electrode 26 is shared by (commonized in) a plurality ofimaging elements.

In Embodiment 8, in the charge storage period, the potential V₁₁ isapplied to the first electrode 21, the potential V₁₂ is applied to thecharge storage electrode 24, the potential V₁₃ is applied to thetransfer control electrode 25, and the potential V₁₄ is applied to thecharge discharge electrode 26, from the drive circuit, and charges arestored in the photoelectric conversion layer 23. Photoelectricconversion occurs in the photoelectric conversion layer 23 by lightincident on the photoelectric conversion layer 23. The holes generatedby the photoelectric conversion are sent from the second electrode 22 tothe drive circuit via a wiring V_(OU). On the other hand, since thepotential of the first electrode 21 is higher than the potential of thesecond electrode 22, that is, for example, a positive potential isapplied to the first electrode 21 and a negative potential is applied tothe second electrode 22, and thus V₁₄>V₁₁ (e.g., V₁₂>V₁₄>V₁₁). Further,the potential V₁₃ is applied to the transfer control electrode 25. As aresult, the electrons generated by the photoelectric conversion areattracted to the charge storage electrode 24 and stop at the region ofthe photoelectric conversion layer 23 opposite to the charge storageelectrode 24, and are reliably prevented from moving toward the firstelectrode 21. However, electrons (so-called overflowed electrons) thatare not sufficiently attracted by the charge storage electrode 24 or arenot stored in the photoelectric conversion layer 23 are sent to thedrive circuit via the charge discharge electrode 26.

A reset operation is performed at the latter stage of the charge storageperiod. As a result, the potential of the first floating diffusion layerFD₁ is reset such that the potential of the first floating diffusionlayer FD₁ becomes the potential V_(DD) of the power supply.

After the reset operation is completed, charges are read out. That is,in the charge transfer period, the potential V₂₁ is applied to the firstelectrode 21, the potential V₂₂ is applied to the charge storageelectrode 24, the potential V₁₃ or the potential V₂₃ is applied to thetransfer control electrode 25, and the potential V₂₄ is applied to thecharge discharge electrode 26, from the drive circuit. Here, it isassumed that V₂₄<V₂₁ (for example, V₂₄<V₂₂<V₂₁). As a result, electronsthat have stopped in the region of the photoelectric conversion layer 23opposite to the charge storage electrode 24 are reliably read out to thefirst electrode 21 and further to the first floating diffusion layerFD₁. That is, the charges stored in the photoelectric conversion layer23 are read out to the control unit.

Thus, a series of operations including charge storage, reset operation,charge transfer, and the like is completed.

The operations of the amplification transistor TR1 _(amp) and the selecttransistor TR1 _(sel) after the electrons are read out to the firstfloating diffusion layer FD₁ are the same as those of the conventionaltransistors. Further, for example, a series of operations such as chargestorage, reset operation, and charge transfer of the second imagingelement and the third imaging element are similar to a series ofconventional operations such as charge storage, reset operation, andcharge transfer.

In Embodiment 8, so-called overflowed electrons are sent to the drivecircuit via the charge discharge electrode 26, and thus leakage ofadjacent pixels to the charge storage portion can be suppressed andoccurrence of blooming can be suppressed. Further, as a result, theimaging performance of the imaging element can be improved. In somecases, by omitting the charge discharge electrode 26 and controlling thepotential of the first electrode 21, overflowed electrons may bedischarged via the first electrode 21.

Embodiment 9

Embodiment 9 is a modification of Embodiments 1 to 8, and relates to theimaging element or the like including a plurality of charge storageelectrode segments according to the present disclosure.

A schematic partial sectional view of a part of the imaging element ofEmbodiment 9 is shown in FIG. 31, an equivalent circuit diagram of theimaging element of Embodiment 9 is shown in FIGS. 32 and 33, a schematicarrangement view of the first electrode and the charge storage electrodeforming the photoelectric conversion unit including the charge storageelectrode of the imaging element of Embodiment 9, and a transistorforming the control unit is shown in FIG. 34, and a potential state ofeach portion during an operation of the imaging element of Embodiment 9is schematically shown in FIGS. 35 and 36. Furthermore, an equivalentcircuit diagram of the imaging element of Embodiment 9 for describingeach portion of FIGS. 35 and 36 is shown in FIG. 6B. Further, inEmbodiments 9 to 15, specific description of the transfer controlelectrode 25 will be omitted. Furthermore, illustration of the transfercontrol electrode 25 in FIGS. 36B, 32, and 33 is omitted.

In Embodiment 9, the charge storage electrode 24 includes a plurality ofthe charge storage electrode segments 24A, 24B, and 24C. The number ofthe charge storage electrode segments may be 2 or more, and is set to“3” in Embodiment 9. Further, in the imaging element of Embodiment 9,since the potential of the first electrode 21 is higher than thepotential of the second electrode 22, that is, for example, a positivepotential is applied to the first electrode 21, and a negative potentialis applied to the second electrode 22. Thus, in the charge transferperiod, the potential applied to the charge storage electrode segment24A located closest to the first electrode 21 is higher than thepotential applied to the charge storage electrode segment 24C locatedfarthest from the first electrode 21. In this way, electrons that havestopped in the region of the photoelectric conversion layer 23 oppositeto the charge storage electrode 24 are further reliably read out to thefirst electrode 21, and further to the first floating diffusion layerFD₁ by imparting a potential gradient to the charge storage electrode24. That is, the charges stored in the photoelectric conversion layer 23are read out to the control unit.

In an example shown in FIG. 35, when the potential of charge storageelectrode segment 24C<the potential of charge storage electrode segment24B<the potential of charge storage electrode segment 24A in the chargetransfer period, electrons that have stopped in the region of thephotoelectric conversion layer 23 are simultaneously read out to thefirst floating diffusion layer FD₁. On the other hand, in an exampleshown in FIG. 36, when the potential of the charge storage electrodesegment 24C, the potential of the charge storage electrode segment 24B,and the potential of the charge storage electrode segment 24A aregradually changed (that is, changed in a step manner or in a slopemanner) in the charge transfer period, the electrons that have stoppedin the region of the photoelectric conversion layer 23 opposite to thecharge storage electrode segment 24C are moved to the region of thephotoelectric conversion layer 23 opposite to the charge storageelectrode segment 24B, subsequently, the electrons that have stopped inthe region of the photoelectric conversion layer 23 opposite to thecharge storage electrode segment 24B are moved to the region of thephotoelectric conversion layer 23 opposite to the charge storageelectrode segment 24A, and subsequently, the electrons that have stoppedin the region of the photoelectric conversion layer 23 opposite to thecharge storage electrode segment 24A are reliably read out to the firstfloating diffusion layer FD₁.

As a schematic arrangement view of a first electrode and a chargestorage electrode forming a modified example of the imaging element ofEmbodiment 9 and a transistor forming a control unit shown in FIG. 37, asource/drain region 51B of another side of the reset transistor TR1_(rst) may be grounded instead of being connected to the power supplyV_(DD).

Embodiment 10

Embodiment 10 is a modification of Embodiments 1 to 9 and relates to theimaging element of the first and sixth configurations.

A schematic partial sectional view of the imaging element of Embodiment10 is shown in FIG. 38 and an enlarged schematic partial sectional viewof a part in which the charge storage electrode, the photoelectricconversion layer, and the second electrode are stacked is shown in FIG.39. An equivalent circuit diagram of the imaging element of Embodiment10 is similar to the equivalent circuit diagram of the imaging elementof Embodiment 1 described in FIGS. 7 and 8, and a schematic arrangementview of the first electrode and the charge storage electrode forming thephotoelectric conversion unit including the charge storage electrode ofthe imaging element of Embodiment 10, and a transistor forming thecontrol unit is similar to that of the imaging element of Embodiment 1described in FIG. 3, 4, 5A, or 5B. Furthermore, an operation of theimaging element (the first imaging element) of Embodiment 10 issubstantially similar to the operation of the imaging element ofEmbodiment 1.

Here, in the imaging element of Embodiment 10 or imaging elements ofEmbodiments 11 to 15 to be described below, the photoelectric conversionunit includes N (where N≥2) photoelectric conversion unit segments(specifically, three photoelectric conversion unit segments 10′₁, 10′₂,and 10′₃).

The photoelectric conversion layer 23 includes N photoelectricconversion layer segments (specifically, three photoelectric conversionlayer segments 23′₁, 23′₂, and 23′₃).

The insulating layer 82 includes N insulating layer segments(specifically, three insulating layer segments 82′₁, 82′₂, and 82′₃).

In Embodiments 10 to 12, the charge storage electrode 24 includes Ncharge storage electrode segments (specifically, in each embodiment,three charge storage electrode segments 24′₁, 24′₂, and 24′₃).

In Embodiments 13 and 14, in some cases, the charge storage electrode 24includes N charge storage electrode segments disposed to be separatedfrom each other in Embodiment 12 (specifically, three charge storageelectrode segments 24′₁, 24′₂, and 24′₃).

An n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment 10′_(n) includes an n^(th) charge storage electrode segment24′_(n), an n^(th) insulating layer segment 82′_(n), and an n^(th)photoelectric conversion layer segment 23′_(n).

The photoelectric conversion unit segment of a larger value of n islocated more away from the first electrode 21.

Further, in the photoelectric conversion layer segment, the thickness ofa part of the photoelectric conversion layer may be changed and thethickness of the part of the insulating layer may be set to be constantto change the thickness of the photoelectric conversion layer segment,the thickness of the part of the photoelectric conversion layer may beset to be constant and the thickness of a part of the insulating layermay be changed to change the thickness of the photoelectric conversionlayer segment, or the thickness of the part of the photoelectricconversion layer may be changed and the thickness of the part of theinsulating layer may be changed to change the thickness of thephotoelectric conversion layer segment.

The imaging element of Embodiment 10 or the imaging element ofEmbodiments 11 and 14 described below includes a photoelectricconversion unit formed by stacking a first electrode 21, a photoelectricconversion layer 23, and a second electrode 22, and the photoelectricconversion unit further includes a charge storage electrode 24 which isdisposed to be spaced apart from the first electrode 21 and is disposedto face the photoelectric conversion layer 23 via the insulating layer82.

Further, in a case in which a stacking direction of the charge storageelectrode 24, the insulating layer 82, and the photoelectric conversionlayer 23 is defined as a Z direction and a direction away from the firstelectrode 21 is defined as an X direction, the cross-sectional area ofthe stacked portion when the stacked portion in which the charge storageelectrode 24, the insulating layer 82, and the photoelectric conversionlayer 23 are stacked is cut in a YZ virtual plane changes depending onthe distance from the first electrode.

Furthermore, in the imaging element of Embodiment 10, the thickness ofthe insulating layer segment gradually changes from the firstphotoelectric conversion unit segment 10′₁ to the N^(th) photoelectricconversion unit segment 10′_(N). Specifically, the thickness of theinsulating layer segment gradually increases. Alternatively, in theimaging element of Embodiment 10, the width of the cross section of thestacked portion is constant and the thickness of the cross section ofthe stacked portion, specifically, the thickness of the insulating layersegment gradually increases depending on the distance from the firstelectrode 21. Further, the thickness of the insulating layer segmentincreases in a stepwise manner. The thickness of the insulating layersegment 82′_(n) in the n^(th) photoelectric conversion unit segment10′_(n) is constant. When the thickness of the insulating layer segment82′_(n) in the n^(th) photoelectric conversion unit segment 10′_(n) isdefined as “1”, the thickness of the insulating layer segment82′_((n+1)) in the (n+1)^(th) photoelectric conversion unit segment10′_((n+1)) may be 2 to 10, but are not limited thereto. In Embodiment10, the thickness of the insulating layer segments 82′₁, 82′₂, and 82′₃gradually increases by gradually decreasing the thickness of the chargestorage electrode segments 24′₁, 24′₂, and 24′₃. The thickness of thephotoelectric conversion layer segments 23′₁, 23′₂, and 23′₃ isconstant.

Hereinafter, the operation of the imaging element of Embodiment 10 willbe described.

In the charge storage period, the potential V₁₁ is applied to the firstelectrode 21 and the potential V₁₂ is applied to the charge storageelectrode 24, from the drive circuit. Photoelectric conversion occurs inthe photoelectric conversion layer 23 by light incident on thephotoelectric conversion layer 23. The holes generated by thephotoelectric conversion are sent from the second electrode 22 to thedrive circuit via a wiring V_(OU). On the other hand, since thepotential of the first electrode 21 is higher than the potential of thesecond electrode 22, that is, for example, a positive potential isapplied to the first electrode 21 and a negative potential is applied tothe second electrode 22, and thus V₁₂≥V₁₁, or preferably V₁₂>V₁₁. As aresult, the electrons generated by the photoelectric conversion areattracted to the charge storage electrode 24 and stop at the region ofthe photoelectric conversion layer 23 opposite to the charge storageelectrode 24. That is, charges are stored in the photoelectricconversion layer 23. Since V₁₂>V₁₁, electrons generated in thephotoelectric conversion layer 23 do not move toward the first electrode21. As the photoelectric conversion time elapses, the potential in theregion of the photoelectric conversion layer 23 opposite to the chargestorage electrode 24 becomes a more negative value.

In the imaging element of Embodiment 10, since the configuration inwhich the thickness of the insulating layer segment gradually increasesis adopted, when V₁₂≥V₁₁ in the charge storage period, the n^(th)photoelectric conversion unit segment 10′_(n) can store a larger amountof charge as compared to the (n+1)^(th) photoelectric conversion unitsegment 10′_((n+1)), and a strong electric field can be applied thereto,and thus can reliably prevent the charge flow from the firstphotoelectric conversion unit segment 10′₁ to the first electrode 21.

A reset operation is performed at the latter stage of the charge storageperiod. As a result, the potential of the first floating diffusion layerFD₁ is reset such that the potential of the first floating diffusionlayer FD₁ becomes the potential V_(DD) of the power supply.

After the reset operation is completed, charges are read out. That is,in the charge transfer period, the potential V₂₁ is applied to the firstelectrode 21 and the potential V₂₂ is applied to the charge storageelectrode 24, from the drive circuit. Here, it is assumed that V₂₁>V₂₂.As a result, electrons that have stopped in the region of thephotoelectric conversion layer 23 opposite to the charge storageelectrode 24 are read out to the first electrode 21 and further to thefirst floating diffusion layer FD₁. That is, the charges stored in thephotoelectric conversion layer 23 are read out to the control unit.

More specifically, when V₂₁>V₂₂ in the charge transfer period, thecharge flow from the first photoelectric conversion unit segment 10′₁ tothe first electrode 21, the charge flow from the (n+1)^(th)photoelectric conversion unit segment 10′_((n+1)) to the n^(th)photoelectric conversion unit segment 10′_(n) can be reliably secured.

Thus, a series of operations including charge storage, reset operation,charge transfer, and the like is completed.

In the imaging element of Embodiment 10, since the thickness of theinsulating layer segments gradually changes from the first photoelectricconversion unit segment to the N^(th) photoelectric conversion unitsegment, or, since the cross-sectional area of the stacked portion whenthe stacked portion in which the charge storage electrode, theinsulating layer, and the photoelectric conversion layer are stacked iscut in a YZ virtual plane changes depending on the distance from thefirst electrode, a type of charge transfer gradient is formed, andcharges generated by photoelectric conversion can be transferred moreeasily and reliably.

Since the imaging element of Embodiment 10 can be manufacturedsubstantially in accordance with a similar method to that of the imagingelement of Embodiment 1, detailed description will be omitted.

Further, in the imaging element of Embodiment 10, in the formation ofthe first electrode 21, the charge storage electrode 24, and theinsulating layer 82, first, a conductive material for forming the chargestorage electrode 24′₃ is formed on the interlayer insulating layer 81and the conductive material layer is patterned to leave the conductivematerial layer in the region where the photoelectric conversion unitsegments 10′₁, 10′₂, and 10′₃ and the first electrode 21 are to beformed, whereby a part of the first electrode 21 and the charge storageelectrode 24′₃ may be obtained. Next, an insulating layer for formingthe insulating layer segment 82′₃ is formed on the entire surface, theinsulating layer is patterned, and a flattening treatment is performedthereon, and thereby the insulating layer segment 82′₃ may be obtained.Next, a conductive material layer for forming the charge storageelectrode 24′₂ is formed on the entire surface, and the conductivematerial layer is patterned to leave the conductive material layer inthe region where the photoelectric conversion unit segments 10′₁ and10′₂ and the first electrode 21 are to be formed, and thereby a part ofthe first electrode 21 and the charge storage electrode 24′₂ may beobtained. Next, an insulating layer for forming the insulating layersegment 82′₂ is formed on the entire surface, the insulating layer ispatterned, and planarization treatment is performed thereon, and therebythe insulating layer segment 82′₂ may be obtained. Next, a conductivematerial layer for forming the charge storage electrode 24′₁ is formedon the entire surface, and the conductive material layer is patterned toleave the conductive material layer in the region where thephotoelectric conversion unit segment 10′₁ and the first electrode 21are to be formed, and thereby the first electrode 21 and the chargestorage electrode 24′₁ may be obtained. Next, the insulating layer isformed on the entire surface, and planarization treatment is performedthereon, and thereby the insulating layer segment 82′₁ (insulating layer82) may be obtained. Then, the photoelectric conversion layer 23 isformed on the insulating layer 82. Thus, the photoelectric conversionunit segments 10′₁, 10′₂, and 10′₃ may be obtained.

As a schematic arrangement view of a first electrode and a chargestorage electrode forming a modified example of the imaging element ofEmbodiment 10 and a transistor forming a control unit shown in FIG. 40,a source/drain region 51B of another side of the reset transistor TR1_(rst) may be grounded instead of being connected to the power supplyV_(DD).

Embodiment 11

The imaging element of Embodiment 11 relates to an imaging elementaccording to the second and sixth configurations. As shown in FIG. 41which is an enlarged schematic partial sectional view of a part in whicha charge storage electrode, a photoelectric conversion layer, and asecond electrode are stacked, in an imaging element of Embodiment 11,the thickness of the photoelectric conversion layer segment graduallychanges from the first photoelectric conversion unit segment 10′₁ to theN^(th) photoelectric conversion unit segment 10′_(N). Alternatively, inthe imaging element of Embodiment 11, the width of the cross section ofthe stacked portion is constant and the thickness of the cross sectionof the stacked portion, specifically the thickness of the photoelectricconversion layer segment gradually increases depending on the distancefrom the first electrode 21. More specifically, the thickness of thephotoelectric conversion layer segment gradually increases. Further, thethickness of the photoelectric conversion layer segment increases in astepwise manner. The thickness of the photoelectric conversion layersegment 23′_(n) in the n^(th) photoelectric conversion unit segment10′_(n) is constant. When the thickness of the photoelectric conversionlayer segment 23′_(n) in the n^(th) photoelectric conversion unitsegment 10′_(n) is defined as “1”, the photoelectric conversion layersegment 23 _((n+1)) in the (n+1)^(th) photoelectric conversion unitsegment 10 _((n+1)) may be exemplified as 2 to 10, but it is not limitedto such values. In Embodiment 11, the thicknesses of the photoelectricconversion layer segments 23′₁, 23′₂, and 23′₃ are gradually increasedby gradually decreasing the thickness of the charge storage electrodesegments 24′₁, 24′₂, and 24′₃. The thickness of the insulating layersegments 82′₁, 82′₂, and 82′₃ is constant. Furthermore, in thephotoelectric conversion layer segment, for example, it is only requiredthat the thickness of a part of the insulating layer is constant and thethickness of a part of the photoelectric conversion layer is changed tochange the thickness of the photoelectric conversion layer segment.

In the imaging element of Embodiment 11, since the thickness of thephotoelectric conversion layer segment gradually increases, when V₁₂≥V₁₁in the charge storage period, the n^(th) photoelectric conversion unitsegment 10′_(n) is applied with a stronger electric field than the(n+1)^(th) photoelectric conversion unit segment 10′_((n+1)), andthereby the charge flow from the first photoelectric conversion unitsegment 10′₁ to the first electrode 21 may be reliably prevented.Further, when V₂₂<V₂₁ in the charge transfer period, the charge flowfrom the first photoelectric conversion unit segment 10′₁ to the firstelectrode 21, and the charge flow from the (n+1)^(th) photoelectricconversion unit segment 10′_((n+1)) to the n^(th) photoelectricconversion unit segment 10′_(n) may be reliably ensured.

As such, in the imaging element of Embodiment 11, the thickness of thephotoelectric conversion layer segment gradually changes from the firstphotoelectric conversion unit segment to the N^(th) photoelectricconversion unit segment, or, the cross sectional area of the stackedportion when the stacked portion in which the charge storage electrode,the insulating layer, and the photoelectric conversion layer are stackedis cut in a YZ virtual plane changes depending on the distance from thefirst electrode, a type of charge transfer gradient is formed, andcharges generated by photoelectric conversion can be transferred moreeasily and reliably.

In the imaging element of Embodiment 11, in the formation of the firstelectrode 21, the charge storage electrode 24, the insulating layer 82,and the photoelectric conversion layer 23, first, a conductive materialfor forming the charge storage electrode 24′₃ is formed on theinterlayer insulating layer 81 and the conductive material layer ispatterned to leave the conductive material layer in the region where thephotoelectric conversion unit segments 10′₁, 10′₂, and 10′₃ and thefirst electrode 21 are to be formed, whereby a part of the firstelectrode 21 and the charge storage electrode 24′₃ may be obtained.Next, a conductive material layer for forming the charge storageelectrode 24′₂ is formed on the entire surface, the conductive materiallayer is patterned to leave the conductive material layer in the regionwhere the photoelectric conversion unit segments 10′₁ and 10′₂ and thefirst electrode 21 are to be formed, and thereby a part of the firstelectrode 21 and the charge storage electrode 24′₂ may be obtained.Next, a conductive material layer for forming the charge storageelectrode 24′₁ is formed on the entire surface, the conductive materiallayer is patterned to leave the conductive material layer in the regionwhere the photoelectric conversion unit segment 10′₁ and the firstelectrode 21 are to be formed, and thereby the first electrode 21 andthe charge storage electrode 24′₁ may be obtained. Then, an insulatinglayer 82 is conformally deposited on the entire surface. Then, thephotoelectric conversion layer 23 is formed on the insulating layer 82,and the photoelectric conversion layer 23 is subjected to planarizationprocessing. Thus, the photoelectric conversion unit segments 10′₁, 10′₂,and 10′₃ may be obtained.

Embodiment 12

Embodiment 12 relates to the imaging element according to the thirdconfiguration. A schematic partial sectional view of the imaging elementof Embodiment 12 is shown in FIG. 42. In the imaging element ofEmbodiment 12, materials forming the insulating layer segments aredifferent in the adjacent photoelectric conversion unit segments. Here,the value of the relative dielectric constant of the material formingthe insulating layer segment gradually decreases from the firstphotoelectric conversion unit segment 10′₁ to the N^(th) photoelectricconversion unit segment 10′_(N). In the imaging element of Embodiment12, the same electric potential may be applied to all of the N chargestorage electrode segments or different electric potentials may beapplied to each of the N charge storage electrode segments. In thelatter case, as described in Embodiment 13, the charge storage electrodesegments 24′₁, 24′₂, and 24′₃, which are disposed to be spaced apartfrom each other, may be connected to the vertical drive circuit 112forming the drive circuit via pad portions 64 ₁, 64 ₂, and 64 ₃.

Further, when such a configuration is adopted, a type of charge transfergradient is formed, and thus, when V₁₂≥V₁₁ in the charge storage period,the n^(th) photoelectric conversion unit segment stores a larger amountof charge than the (n+1)^(th) photoelectric conversion unit segment.Further, in the state of V₂₂<V₂₁ during the charge storage period, thecharge flow from the first photoelectric conversion unit segment to thefirst electrode, and the charge flow from the (n+1)^(th) photoelectricconversion unit segment to the n^(th) photoelectric conversion unitsegment can be reliably ensured.

Embodiment 13

Embodiment 13 relates to the imaging element according to the fourthconfiguration. A schematic partial sectional view of the imaging elementof Embodiment 13 is illustrated in FIG. 43. In the imaging element ofEmbodiment 13, materials forming the charge storage electrode segmentsare different in adjacent photoelectric conversion unit segments. Here,the value of the work function of the material forming the insulatinglayer segment gradually increases from the first photoelectricconversion unit segment 10′₁ to the N^(th) photoelectric conversion unitsegment 10′_(N). In the imaging element of Embodiment 13, the sameelectric potential may be applied to all of the N charge storageelectrode segments, or different electric potentials may be added toeach of the N charge storage electrode segments. In the latter case, thecharge storage electrode segments 24′₁, 24′₂, and 24′₃ are connected tothe vertical drive circuit 112 forming the drive circuit via the padportions 64 ₁, 64 ₂, and 64 ₃.

Embodiment 14

The imaging element of Embodiment 14 relates to the imaging elementaccording to the fifth configuration. Schematic plan views of the chargestorage electrode segment of Embodiment 14 are shown in FIGS. 44A, 44B,45A, and 45B, and a schematic arrangement view of a first electrode anda charge storage electrode forming the photoelectric conversion unitincluding the charge storage electrode of the imaging element ofEmbodiment 14 and a transistor forming a control unit is shown in FIG.46. The schematic partial sectional view of the imaging element ofEmbodiment 14 is similar to that shown in FIG. 43 or 48. In the imagingelement of Embodiment 14, the area of the charge storage electrodesegment gradually decreases from the first photoelectric conversion unitsegment 10′₁ to the N^(th) photoelectric conversion unit segment10′_(N). In the imaging element of Embodiment 14, the same electricpotential may be applied to all of the N charge storage electrodesegments, or different electric potentials may be added to each of the Ncharge storage electrode segments. In the latter case, as described inEmbodiment 13, the charge storage electrode segments 24′₁, 24′₂, and24′₃ disposed to be spaced apart from each other may be connected to thevertical drive circuit 112 forming the drive circuit via the padportions 64 ₁, 64 ₂, and 64 ₃.

In Embodiment 14, the charge storage electrode 24 includes a pluralityof the charge storage electrode segments 24′₁, 24′₂, and 24′₃. Thenumber of the charge storage electrode segments may be 2 or more, and isset to “3” in Embodiment 14. Further, in the imaging element ofEmbodiment 14, since the potential of the first electrode 21 is higherthan the potential of the second electrode 22, that is, for example, apositive potential is applied to the first electrode 21 and the negativepotential is applied to the second electrode 22, and thus, in the chargetransfer period, the potential applied to the charge storage electrodesegment 24′₁ located closest to the first electrode 21 is higher thanthe potential applied to the charge storage electrode segment 24′₃located farthest from the first electrode 21. In this way, electronsthat have stopped in the region of the photoelectric conversion layer 23opposite to the charge storage electrode 24 are further reliably readout to the first electrode 21, and further to the first floatingdiffusion layer FD₁ by imparting a potential gradient to the chargestorage electrode 24. That is, the charges stored in the photoelectricconversion layer 23 are read out to the control unit.

Then, when the potential of charge storage electrode segment 24′3<thepotential of charge storage electrode segment 24′2<the potential ofcharge storage electrode segment 24′₁ in the charge transfer period,electrons that have stopped in the region of the photoelectricconversion layer 23 are simultaneously read out to the first floatingdiffusion layer FD₁. On the other hand, when the potential of the chargestorage electrode segment 24′₃, the potential of the charge storageelectrode segment 24′₂, and the potential of the charge storageelectrode segment 24′₁ are gradually changed (that is, changed in a stepmanner or in a slope manner) in the charge transfer period, theelectrons that have stopped in the region of the photoelectricconversion layer 23 opposite to the charge storage electrode segment24′₃ are moved to the region of the photoelectric conversion layer 23opposite to the charge storage electrode segment 24′₂, and subsequently,the electrons that have stopped in the region of the photoelectricconversion layer 23 opposite to the charge storage electrode segment24′₂ are moved to the region of the photoelectric conversion layer 23opposite to the charge storage electrode segment 24′₁, and subsequently,the electrons that have stopped in the region of the photoelectricconversion layer 23 opposite to the charge storage electrode segment24′₁ are reliably read out to the first floating diffusion layer FD₁.

As a schematic arrangement view of a first electrode and a chargestorage electrode forming a modified example of the imaging element ofEmbodiment 14 and a transistor forming a control unit shown in FIG. 47,a source/drain region 51B of another side of the reset transistor TR3_(rst) may be grounded instead of being connected to the power supplyV_(DD).

Even in the imaging element of Embodiment 14, a type of charge transfergradient is formed by adopting such a configuration. That is, since thearea of the charge storage electrode segment gradually decreases fromthe first photoelectric conversion unit segment 10′₁ to the N^(th)photoelectric conversion unit segment 10′_(N), when V₁₂≥V₁₁ in thecharge storage period, the n^(th) photoelectric conversion unit segmentcan store a larger amount of charge than the (n+1)^(th) photoelectricconversion unit segment. Further, in the state of V₂₂<V₂₁ during thecharge storage period, the charge flow from the first photoelectricconversion unit segment to the first electrode, and the charge flow fromthe (n+1)^(th) photoelectric conversion unit segment to the n^(th)photoelectric conversion unit segment can be reliably ensured.

Embodiment 15

Embodiment 15 relates to the imaging element according to the sixthconfiguration. A schematic partial sectional view of the imaging elementof Embodiment 15 is shown in FIG. 48. Furthermore, schematic plan viewsof the charge storage electrode segments of Embodiment 15 are shown inFIGS. 49A and 49B. The imaging element of Embodiment 15 includes aphotoelectric conversion unit formed by stacking a first electrode 21, aphotoelectric conversion layer 23, and a second electrode 22, and thephotoelectric conversion unit further includes a charge storageelectrode 24 (24″₁, 24″₂, 24″₃) which is disposed to be spaced apartfrom the first electrode 21 and is disposed to face the photoelectricconversion layer 23 via the insulating layer 82. Further, in a case inwhich a stacking direction of the charge storage electrode 24 (24″₁,24″₂, 24″₃), the insulating layer 82, and the photoelectric conversionlayer 23 is defined as a Z direction and a direction away from the firstelectrode 21 is defined as an X direction, the cross-sectional area ofthe stacked portion when the stacked portion in which the charge storageelectrode 24 (24″₁, 24″₂, 24″₃), the insulating layer 82, and thephotoelectric conversion layer 23 are stacked is cut in a YZ virtualplane changes depending on the distance from the first electrode 21.

Specifically, in the imaging element of Embodiment 15, the thickness ofthe cross section of the stacked portion is constant, and the width ofthe cross section of the stacked portion is narrowed as being away fromthe first electrode 21. Further, the width may be continuously narrowed(see FIG. 49A), or may be narrowed in a stepwise manner (see FIG. 49B).

As described above, in the imaging element of Embodiment 15, since thecross-sectional area of the stacked portion when the stacked portion inwhich the charge storage electrode 24 (24″₁, 24″₂, 24″₃), the insulatinglayer 82, and the photoelectric conversion layer 23 are stacked is cutin the YZ virtual plane varies depending on the distance from the firstelectrode, a type of charge transfer gradient is formed, and the chargesgenerated by photoelectric conversion can be transferred more easily andreliably.

Although the present disclosure has been described on the basis of thepreferred embodiments, the present disclosure is not limited to theseembodiments. The structure and configuration, the manufacturingconditions, the manufacturing method, and the used materials of thestacked-type imaging element, imaging element, and solid-state imagingapparatus described in the embodiments are illustrative and may besuitably changed. The imaging elements of each embodiment can be used incombination appropriately. For example, the imaging element ofEmbodiment 10, the imaging element of Embodiment 11, the imaging elementof Embodiment 12, the imaging element of Embodiment 13, and the imagingelement of Embodiment 14 may be arbitrarily combined, and the imagingelement of Embodiment 10, the imaging element of Embodiment 11, theimaging element of Embodiment 12, the imaging element of Embodiment 13,and the imaging element of Embodiment 15 may be arbitrarily combined.

As a modified example of the example (the example in which the firstcorner 24 a is chamfered) illustrated in FIG. 5B, as shown in aschematic plan view of FIG. 63A, a notched portion of the first corner24 a can have a shape depressed toward the middle of the charge storageelectrode 24.

In some cases, floating diffusion layers FD₁, FD₂, FD₃, 51C, 45C, and46C may be shared.

For example, as a modified example of the imaging element in Embodiment1 shown in FIG. 50, the first electrode 21 may extend in the opening 85Aprovided in the insulating layer 82 and may be connected to thephotoelectric conversion layer 23.

Alternatively, for example, as a modified example of the imaging elementdescribed in Embodiment 1 shown in FIG. 51, and an enlarged schematicpartial sectional view of a part of the first electrode and the likeshown in FIG. 52A, the edge of the top surface pf the first electrode 21is covered with the insulating layer 82, and the first electrode 21 isexposed on the bottom surface of the opening 85B. When the surface ofthe insulating layer 82 in contact with the top surface of the firstelectrode 21 is defined as the first surface 82 a and the surface of theinsulating layer 82 in contact with the portion of the photoelectricconversion layer 23 opposite to the charge storage electrode 24 isdefined as the second surface 82 b, the side surface of the opening 85Bhas an inclination that expands from the first surface 82 a toward thesecond surface 82 b. As described above, the movement of charges fromthe photoelectric conversion layer 23 to the first electrode 21 becomessmoother by inclining the side surface of the opening 85B. Further, theside surface of the opening 85B is rotationally symmetric about the axisof the opening 85B in an example shown in FIG. 52A, but the opening 85Cmay be provided such that the side surface the opening 85C having aninclination expanding from the first surface 82 a towards the secondsurface 82 b is positioned on the side of the charge storage electrode24 as shown in FIG. 52B. As a result, it becomes difficult to transfercharges from a part of the photoelectric conversion layer 23 on the sideopposite to the charge storage electrode 24 across the opening 85C.Furthermore, the side surface of the opening 85B has an inclination thatexpands from the first surface 82 a toward the second surface 82 b, butthe edge portion of the side surface of the opening 85B in the secondsurface 82 b may be located outside the edge of the first electrode 21as shown in FIG. 52A or may be located inside the edge of the firstelectrode 21 as shown in FIG. 52C. When the former configuration isadopted, transfer of charges becomes further easier, and when the latterconfiguration is adopted, it is possible to reduce variations in shapeat the time of forming an opening.

These openings 85B and 85C may be formed by inclining an opening sidesurface of an etching mask by reflowing an etching mask including aresist material formed when an opening is formed in an insulating layerby an etching method, and etching the insulating layer 82 using theetching mask.

Alternatively, as for the charge discharge electrode 26 described inEmbodiment 8, as shown in FIG. 53, the photoelectric conversion layer 23may extend in the second opening 86A provided in the insulating layer 82and may be connected to the charge discharge electrode 26, the edge ofthe top surface of the charge discharge electrode 26 may be covered withthe insulating layer 82, and the charge discharge electrode 26 may beexposed on the bottom surface of the second opening 86A. When thesurface of the insulating layer 82 in contact with the top surface ofthe charge discharge electrode 26 is defined as a third surface 82 c andthe surface of the insulating layer 82 in contact with a part of thephotoelectric conversion layer 23 opposite to the charge storageelectrode 24 is defined as a second surface 82 b, the side surface ofthe second opening 86A may have an inclination that expands from thethird surface 82 c toward the second surface 82 b.

Furthermore, for example, as a modified example of the imaging elementdescribed in Embodiment 1 shown in FIG. 54, light may be incident fromthe side of the second electrode 22 and a light shielding layer 15 maybe formed on the light incident side from the second electrode 22.Further, various wirings provided closer to the light incident side thanthe photoelectric conversion layer may also function as a lightshielding layer.

Further, in an example shown in FIG. 54, the light shielding layer 15 isformed above the second electrode 22, that is, the light shielding layer15 is formed at the light incident side from the second electrode 22 andabove the first electrode 21, but may be disposed on the light incidentsurface side of the second electrode 22 as shown in FIG. 55.Furthermore, in some cases, as shown in FIG. 56, the light shieldinglayer 15 may be formed on the second electrode 22.

Alternatively, light may enter from the second electrode 22 side andlight may not enter the first electrode 21. Specifically, as shown inFIG. 54, the light shielding layer 15 is formed on the light incidentside from the second electrode 22 and above the first electrode 21.Alternatively, as shown in FIG. 58, an on-chip microlens 14 may beprovided above the charge storage electrode 24 and the second electrode22, and light incident on the on-chip microlens 14 may be focused on thecharge storage electrode 24, and may not reach the first electrode 21.Further, as described in Embodiment 1, in a case where the transfercontrol electrode 25 is provided, light may not be incident on the firstelectrode 21 and the transfer control electrode 25. Specifically, asshown in FIG. 57, a structure in which the light shielding layer 15 isformed above the first electrode 21 and the transfer control electrode25 may be realized. Alternatively, light incident on the on-chipmicrolens 14 may not arrive at the first electrode 21 or the firstelectrode 21 and the transfer control electrode 25.

When these configurations and structures are adopted, or the lightshielding layer 15 is provided such that light enters only thephotoelectric conversion layer 23 located above the charge storageelectrode 24, or the on-chip microlens 14 is designed, a part of thephotoelectric conversion layer 23 located above the first electrode 21(or above the first electrode 21 and the transfer control electrode 25)does not contribute to photoelectric conversion, and thus all the pixelscan be more reliably reset simultaneously, and a global shutter functioncan be realized more easily. That is, in a driving method of asolid-state imaging apparatus having a plurality of imaging elementshaving such configurations and structures,

in all the imaging elements, the charge in the first electrode 21 issimultaneously discharged out of the system while charges are stored inthe photoelectric conversion layer 23.

Thereafter, in all the imaging elements, the charge stored in thephotoelectric conversion layer 23 is transferred to the first electrode21 and the charge transferred to the first electrode 21 in each imagingelement is read sequentially after completion of the transfer.

Each process is repeated.

In such a driving method of a solid-state imaging apparatus, eachimaging element has a structure in which light incident from the secondelectrode side does not enter the first electrode, and in all theimaging elements, charges in the first electrode are simultaneouslydischarged to the outside of the system while charges are stored in thephotoelectric conversion layer, and thus the reset of the firstelectrode can be reliably performed simultaneously in all the imagingelements. Further, thereafter, in all the imaging elements, the chargesstored in the photoelectric conversion layer are simultaneouslytransferred to the first electrode, and after completion of thetransfer, the charges transferred to the first electrode in each imagingelement are sequentially read out. Therefore, a so-called global shutterfunction can be easily realized.

Furthermore, as a modified example of Embodiment 1, as shown in FIG. 59,a plurality of transfer control electrodes may be provided from aposition closest to the first electrode 21 to the charge storageelectrode 24. Further, an example in which two transfer controlelectrodes 25′ and 25″ are provided shown in FIG. 59. Further, theon-chip microlens 14 is provided above the charge storage electrode 24and the second electrode 22. A structure in which light incident on theon-chip microlens 14 may be condensed on the charge storage electrode 24and may not arrive at the first electrode 21 and the transfer controlelectrodes 25′ and 25″ may be adopted.

In Embodiment 10 shown in FIGS. 38 and 39, the thickness of theinsulating layer segments 82′₁, 82′₂, and 82′₃ is gradually increased bygradually reducing the thicknesses of the charge storage electrodesegments 24′₁, 24′₂, and 24′₃. On the other hand, as shown in FIG. 60which is an enlarged schematic partial sectional view of a part in whicha charge storage electrode, a photoelectric conversion layer, and asecond electrode are stacked in the modified example of Embodiment 10,the thicknesses of the charge storage electrode segments 24′₁, 24′₂, and24′₃ may be constant, and the thickness of the insulating layer segments82′₁, 82′₂, and 82′₃ may be gradually increased. Further, the thicknessof photoelectric conversion layer segments 23′₁, 23′₂, and 23′₃ isconstant.

Furthermore, in Embodiment 11 shown in FIG. 41, the thickness of thephotoelectric conversion layer segment 23′₁, 23′₂, and 23′₃ is graduallyincreased by gradually reducing the thickness of the charge storageelectrode segment 24′₁, 24′₂, and 24′₃. On the other hand, as shown inFIG. 61 which is an enlarged schematic partial sectional view of a partin which a charge storage electrode, a photoelectric conversion layer,and a second electrode are stacked in the modified example of Embodiment11, the thicknesses of the charge storage electrode segments 24′₁, 24′₂,and 24′₃ may be constant and the thickness of the insulating layersegments 82′₁, 82′₂, and 82′₃ may be gradually reduced, whereby thethickness of the photoelectric conversion layer segment 23′₁, 23′₂, and23′₃ may be gradually increased.

The photoelectric conversion layer is not limited to one-layerconfiguration. For example, as a modified example of the imaging elementand stacked-type imaging element described in Embodiment 1 shown in FIG.62, the photoelectric conversion layer 23 may have a stacked structureof a lower semiconductor layer 23B including, for example, IGZO and anupper photoelectric conversion layer 23A including a material forming aphotoelectric conversion layer 23 described in Embodiment 1. When thelower semiconductor layer 23B is provided in this manner, recombinationat the time of charge storage can be prevented, the transfer efficiencyof the charge stored in the photoelectric conversion layer 23 to thefirst electrode 21 can be increased, and generation of dark current canbe suppressed.

It is needless to say that various modified examples described above canalso be applied to embodiments 2 to 15.

Furthermore, as shown in a schematic plan view of FIG. 63B, the transfercontrol electrode 25 may be disposed between the charge storageelectrode 24 and the first electrode 21.

During the charge transfer period, the potential V₂₁ may be applied tothe first electrode, the potential V₂₂ is applied to the charge storageelectrode, and the potential V₁₃ may be applied to the transfer controlelectrode, from the drive circuit, and the charges stored in thephotoelectric conversion layer may be read out to the control unit viathe first electrode. Here, in a case where the potential of the firstelectrode is higher than the potential of the second electrode, V₁₂>V₁₃and V₂₂≤V₁₃≤V₂₁ (preferably, V₂₂<V₁₃<V₂₁).

In a case where the potential of the first electrode is lower than thepotential of the second electrode, V₁₂<V₁₃ and V₂₂≥V₁₃≥V₂₁ (preferably,V₂₂>V₁₃>V₂₁). That is, an embodiment in which the potential of thetransfer control electrode 25 is fixed during the charge storage period,the reset operation, and the charge transfer period and a potentialwhich is applied to the charge storage electrode 24 is moved verticallyduring the charge storage period and the charge transfer period may beadopted. Further, in a case where the potential of the first electrodeis higher than the potential of the second electrode, it is desirablethat V₁₂≥V₁₁ (preferably V₁₂=V₁₁). In a case where the potential of thesecond electrode is higher than the potential of the first electrode, itis desirable that V₁₁≤V₁₂ (preferably V₁₁=V₁₂).

Furthermore, a case in which an embodiment of the present disclosure isapplied to a CMOS type solid-state imaging apparatus in which unitpixels for detecting signal charges corresponding to the amount ofincident light as a physical quantity are arranged in a matrix was takenas an example in the embodiment, but the present disclosure is notlimited to application to a CMOS type solid-state imaging apparatus, andalso may be applied to a CCD type solid-state imaging apparatus. In thelatter case, the signal charges are transferred in a vertical directionby a vertical transfer register of a CCD type structure, transferred ina horizontal direction by a horizontal transfer register, and amplified,and thereby pixel signals (image signals) are output. Furthermore, thepresent disclosure is not limited to a general column type solid-stateimaging apparatus in which pixels are formed in a two-dimensional matrixand column signal processing circuits are arranged for each pixelcolumn. Moreover, in some cases, a select transistor may be omitted.

Moreover, the imaging element according to the present disclosure is notlimited to application to a solid-state imaging apparatus which detectsthe distribution of the amount of incident light of visible light andcaptures the distribution as an image, and is applicable to asolid-state imaging apparatus which captures the distribution of theamount of incident light of infrared rays, X-rays, or particles or thelike as an image. Furthermore, it can be applied to a generalsolid-state imaging apparatus (physical quantity distribution detectiondevice) such as a fingerprint detection sensor which detectsdistribution of other physical quantities such as pressure,electrostatic capacity, and the like and captures the distribution as animage in a broad sense.

Moreover, the present disclosure is not limited to the solid-stateimaging apparatus which sequentially scans each unit pixel of an imagingarea row by row and reads out a pixel signal from each unit pixel. Itcan also be applied to an XY address-type solid-state imaging apparatuswhich selects arbitrary pixels on a pixel unit basis and reads out pixelsignals on a pixel unit basis from selected pixels. The solid-stateimaging apparatus may be in the form of one chip or in a modular formhaving an imaging function and packaged together with an imaging areaand a drive circuit or an optical system.

Furthermore, it is not only limited to application to a solid-stateimaging apparatus, and can be applied to an imaging apparatus. Here, theimaging apparatus refers to an electronic device having an imagingfunction such as a camera system such as a digital still camera, videocamera, or the like, or a mobile phone. The imaging apparatus may be inthe form of a module mounted on an electronic device, that is, a cameramodule.

FIG. 65 shows an example in which the solid-state imaging apparatus 201including the imaging element according to the present disclosure isused in an electronic device (camera) 200 as a conceptual diagram. Theelectronic device 200 has the solid-state imaging apparatus 201, anoptical lens 210, a shutter device 211, a drive circuit 212, and asignal processing circuit 213. The optical lens 210 forms an image ofimage light (incident light) from the object on an imaging surface ofthe solid-state imaging apparatus 201. As a result, a signal charges arestored for a certain period of time in the solid-state imaging apparatus201. The shutter device 211 controls the light irradiation period andlight blocking period with respect to the solid-state imaging apparatus201. The drive circuit 212 supplies a drive signal for controlling thetransfer operation or the like of the solid-state imaging apparatus 201and the shutter operation of the shutter device 211. A signal of thesolid-state imaging apparatus 201 is transferred by a drive signal(timing signal) supplied from the drive circuit 212. The signalprocessing circuit 213 performs various kinds of signal processing. Avideo signal on which signal processing has been performed is stored ina storage medium such as a memory or output to a monitor. In such anelectronic device 200, it is possible to achieve miniaturization ofpixel size and improvement of transfer efficiency in the solid-stateimaging apparatus 201, and thus the electronic device 200 with improvedpixel characteristics can be obtained. The electronic device 200 towhich the solid-state imaging apparatus 201 can be applied is not onlylimited to a camera, and it is applicable to an imaging apparatus suchas a camera module for a mobile device such as a digital still camera ora mobile phone.

Additionally, the present disclosure may also be configured as below.

[A01]<<Imaging element>>

An imaging element including:

a photoelectric conversion unit formed by stacking a first electrode, aphotoelectric conversion layer, and a second electrode,

in which the photoelectric conversion unit further includes

a charge storage electrode that has an opposite region opposite to thefirst electrode via an insulating layer, and

a transfer control electrode that is opposite to the first electrode andthe charge storage electrode via the insulating layer, and

the photoelectric conversion layer is disposed above at least the chargestorage electrode via the insulating layer.

[A02] The imaging element according to [A01], in which the photoelectricconversion layer is disposed above at least the charge storage electrodeand the transfer control electrode via the insulating layer.

[A03] The imaging element according to [A01] or [A02],

in which a planar shape of the charge storage electrode is a rectanglethat has four corners including a first corner, a second corner, a thirdcorner, and a fourth corner, and

the first corner corresponds to the opposite region.

[A04] The imaging element according to [A03], in which the first cornerhas roundness.

[A05] The imaging element according to [A03], in which the first corneris chamfered.

[A06] The imaging element according to any one of [A01] to [A05],

in which the transfer control electrode is formed by two transfercontrol electrode segments, and

the two transfer control electrode segments and two sides of chargestorage electrodes located on both sides of the opposite region aredisposed adjacent via the insulating layer.

[A07] The imaging element according to [A06], in which, when the twosides of the charge storage electrodes located on both sides of theopposite region are set as a first side and a second side, a length ofthe first side is L₁, and a length of a second side is L₂, a distancebetween the first electrode and an end of the transfer control electrodesegment along the first side is in the range of 0.02×L₁ to 0.5×L₁ and adistance between the first electrode and an end of the transfer controlelectrode segment along the second side is in the range of 0.02×L₂ to0.5×L₂.[A08] The imaging element according to any one of [A01] to [A05], inwhich the transfer control electrode surrounds the charge storageelectrode in a frame form.[A09] The imaging element according to [A01] or [A02],

in which a planar shape of the charge storage electrode is a rectangle,

the opposite region is located to border along one side of the chargestorage electrode,

the transfer control electrode is formed by two transfer controlelectrode segments,

a first transfer control electrode segment is adjacent to the oppositeregion and is opposite to the first electrode and a first region of thecharge storage electrode bordering along one side of the charge storageelectrode via the insulating layer, and

a second transfer control electrode segment is adjacent to the oppositeregion and is opposite to the first electrode and a second region of thecharge storage electrode bordering along one side of the charge storageelectrode via the insulating layer.

[A10] The imaging element according to any one of [A01] to [A09],further including:

a control unit provided on a semiconductor substrate and including adrive circuit,

in which the first electrode, the charge storage electrode, and thetransfer control electrode are connected to the drive circuit,

during a charge storage period, a potential V₁₁ is applied from thedrive circuit to the first electrode, a potential V₁₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₁₃ isapplied from the drive circuit to the transfer control electrode, and acharge is stored in the photoelectric conversion layer,

during a charge transfer period, a potential V₂₁ is applied from thedrive circuit to the first electrode, a potential V₂₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₂₃ orthe potential V₁₃ is applied from the drive circuit to the transfercontrol electrode, the charge stored in the photoelectric conversionlayer is read to the control unit via the first electrode,

here, in a case where a potential of the first electrode is higher thana potential of the second electrode,

V₁₂>V₁₃ and V₂₂≤V₂₃≤V₂₁, or

V₁₂>V₁₃ and V₂₂≤V₁₃≤V₂₁, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode,

V₁₂<V₁₃ and V₂₂≥V₂₃≥V₂₁, or

V₁₂<V₁₃ and V₂₂≥V₁₃≥V₂₁.

[A11] An imaging element according to any one of [A01] to [A10], inwhich a photoelectric conversion layer has a stacked structure of alower semiconductor layer and an upper photoelectric conversion layerfrom the charge storage electrode side.

[A12] The imaging element according to any one of [A01] to [A11], inwhich the insulating layer has a stacked structure of an insulatinglower layer and the insulating upper layer.

[A13] The imaging element according to any one of [A01] to [A12] furtherincluding

the semiconductor substrate,

in which the photoelectric conversion unit is disposed above thesemiconductor substrate.

[A14] The imaging element according to any one of [A01] to [A13], inwhich a first electrode extends in an opening provided in an insulatinglayer and is connected to a photoelectric conversion layer.

[A15] The imaging element according to any one of [A01] to [A14], inwhich a photoelectric conversion layer extends in an opening provided inan insulating layer and is connected to a first electrode.

[A16] The imaging element according to [A15]

in which an edge of the top surface of the first electrode is coveredwith an insulating layer,

the first electrode is exposed to the bottom surface of the opening, and

when a surface of the insulating layer in contact with the top surfaceof the first electrode is a first surface and a surface of theinsulating layer in contact with the portion of the photoelectricconversion layer opposite to the charge storage electrode is a secondsurface, a side surface of the opening has an inclination that expandsfrom the first surface toward the second surface.

[A17] The imaging element according to [A16], in which a side surface ofthe opening has an inclination that expands from the first surfacetoward the second surface, and the side surface is positioned on thecharge storage electrode side.

[A18]<<Charge discharge electrode>>

The imaging element according to any one of [A01] to [A17], furtherincluding a charge discharge electrode which is connected to thephotoelectric conversion layer and disposed to be spaced apart from thefirst electrode, the charge storage electrode, and the transfer controlelectrode.

[A19] The imaging element according to [A18], in which the chargedischarge electrode is disposed to surround the first electrode, thecharge storage electrode, and the transfer control electrode.

[A20] The imaging element according to [A18] or [A19],

in which the photoelectric conversion layer extends in the secondopening provided in the insulating layer and is connected to the chargedischarge electrode,

the edge of the top surface of the charge discharge electrode may becovered with the insulating layer, and

the charge discharge electrode may be exposed on the bottom surface ofthe second opening, and

when the surface of the insulating layer in contact with the top surfaceof the charge discharge electrode is defined as a third surface and thesurface of the insulating layer in contact with a part of thephotoelectric conversion layer opposite to the charge storage electrodeis defined as a second surface, the side surface of the second openingmay have an inclination that expands from the third surface toward thesecond surface.

[A21]<<Potential control of first electrode, the charge storageelectrode, and the charge discharge electrode>>

The imaging element according to any one of [A18] to [A20], furtherincluding:

a control unit provided on a semiconductor substrate and including adrive circuit,

in which the first electrode, the charge storage electrode, the chargedischarge electrode, and the transfer control electrode are connected tothe drive circuit,

during a charge storage period, a potential V₁₁ is applied from thedrive circuit to the first electrode, a potential V₁₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₁₄ isapplied from the drive circuit to the charge discharge electrode, and acharge is stored in the photoelectric conversion layer,

during a charge transfer period, a potential V₂₁ is applied from thedrive circuit to the first electrode, a potential V₂₂ is applied fromthe drive circuit to the charge storage electrode, a potential V₂₄ isapplied from the drive circuit to the charge discharge electrode, andthe charge stored in the photoelectric conversion layer is read to thecontrol unit via the first electrode,

here, in a case where a potential of the first electrode is higher thana potential of the second electrode,

V₁₄>V₁₁ and V₂₄<V₂₁, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode,

V₁₄<V₁₁ and V₂₄>V₂₁.

[A22]<<Charge storage electrode segment>>

The imaging element according to any one of [A01] to [A21], in which thecharge storage electrode includes a plurality of charge storageelectrode segments.

[A23] The imaging element according to [A22],

in which in a case where the potential of the first electrode is higherthan the potential of the second electrode, a potential which is appliedto the charge storage electrode segment located closest to the firstelectrode is higher than a potential which is applied to the chargestorage electrode segment located farthest from the first electrodeduring the charge transfer period, and

in a case where the potential of the first electrode is lower than thepotential of the second electrode, a potential which is applied to thecharge storage electrode segment located closest to the first electrodeis lower than a potential which is applied to the charge storageelectrode segment located farthest from the first electrode during thecharge transfer period.

[A24] The imaging element according to any one of [A01] to [A23],

in which at least the floating diffusion layer and the amplificationtransistor included in the control unit are provided on thesemiconductor substrate, and

the first electrode is connected to a gate section of the amplificationtransistor and the floating diffusion layer.

[A25] The imaging element according to [A24],

in which the reset transistor and the select transistor included in thecontrol unit are further provided on the semiconductor substrate,

the floating diffusion layer is connected to a source/drain region ofone side of the reset transistor, and

the source/drain region of one side of the amplification transistor isconnected to a source/drain region of one side of the select transistorand a source/drain region of the other side of the select transistor isconnected to a signal line.

[A26] The imaging element according to any one of [A01] to [A25], inwhich the size of the charge storage electrode may be larger than thatof the first electrode.

[A27] The imaging element according to any one of [A01] to [A26], inwhich light can be incident from the second electrode side and a lightshielding layer can be formed on the light incident side of the secondelectrode.

[A28] The imaging element according to any one of [A01] to [A26], inwhich light can be incident from the second electrode side and no lightcan be incident on the first electrode.

[A29] The imaging element according to [A28], in which a light shieldinglayer can be formed on a light incident side from the second electrodeand above the first electrode.

[A30] The imaging element according to [A28],

in which the on-chip microlens is provided above the charge storageelectrode and the second electrode, and

light incident on the on-chip microlens is condensed on the chargestorage electrode.

[A31]<<Imaging element: first configuration>>

The imaging element according to any one of [A01] to [A30],

in which the photoelectric conversion unit includes N (where N≥2)photoelectric conversion unit segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge storage electrode includes N charge storage electrodesegments,

an n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment includes an n^(th) charge storage electrode segment, an n^(th)insulating layer segment, and an n^(th) photoelectric conversion layersegment,

the photoelectric conversion unit segment of a larger value of n islocated more away from the first electrode, and

the thickness of the insulating layer segment gradually changes from thefirst photoelectric conversion unit segment to the N^(th) photoelectricconversion unit segment.

[A32]<<Imaging element: second configuration>>

The imaging element according to any one of [A01] to [A30],

in which the photoelectric conversion unit includes N (where N≥2)photoelectric conversion unit segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge storage electrode includes N charge storage electrodesegments,

an n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment includes an n^(th) charge storage electrode segment, an n^(th)insulating layer segment, and an n^(th) photoelectric conversion layersegment,

the photoelectric conversion unit segment of a larger value of n islocated more away from the first electrode, and

the thickness of the photoelectric conversion layer segment graduallychanges from the first photoelectric conversion unit segment to theN^(th) photoelectric conversion unit segment.

[A33]<<Imaging element: third configuration>>

The imaging element according to any one of [A01] to [A30],

in which the photoelectric conversion unit includes N (where N≥2)photoelectric conversion unit segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge storage electrode includes N charge storage electrodesegments,

an n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment includes an n^(th) charge storage electrode segment, an n^(th)insulating layer segment, and an n^(th) photoelectric conversion layersegment,

the photoelectric conversion unit segment of a larger value of n islocated more away from the first electrode, and

the materials of the insulating layer segments are different in theadjacent photoelectric conversion unit segments.

[A34]<<Imaging element: fourth configuration>>

The imaging element according to any one of [A01] to [A30],

in which the photoelectric conversion unit includes N (where N≥2)photoelectric conversion unit segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge storage electrode includes N charge storage electrodesegments disposed to be separated from each other,

an n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment includes an n^(th) charge storage electrode segment, an n^(th)insulating layer segment, and an n^(th) photoelectric conversion layersegment,

the photoelectric conversion unit segment of a larger value of n islocated more away from the first electrode, and

the materials of the charge storage electrode segments are different inthe adjacent photoelectric conversion unit segments.

[A35]<<Imaging element: fifth configuration>>

The imaging element according to any one of [A01] to [A30],

in which the photoelectric conversion unit includes N (where N≥2)photoelectric conversion unit segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge storage electrode includes N charge storage electrodesegments disposed to be separated from each other,

an n^(th) (where n=1, 2, 3, . . . , N) photoelectric conversion unitsegment includes an n^(th) charge storage electrode segment, an n^(th)insulating layer segment, and an n^(th) photoelectric conversion layersegment,

the photoelectric conversion unit segment of a larger value of n islocated more away from the first electrode, and

the area of the charge storage electrode segment gradually decreasesfrom the first photoelectric conversion unit segment to the N^(th)photoelectric conversion unit segment.

[A36]<<Imaging Element: Sixth Configuration>>

The imaging element according to any one of [A01] to [A30], in which astacking direction of the charge storage electrode, the insulatinglayer, and the photoelectric conversion layer is defined as a Zdirection and a direction away from the first electrode is defined as anX direction, a cross-sectional area of a stacked portion when thestacked portion in which the charge storage electrode, the insulatinglayer, and the photoelectric conversion layer are stacked is cut in a YZvirtual plane varies depending on a distance from the first electrode.

[B01]<<Stacked-Type Imaging Element>>

The stacked-type imaging element, including at least one of the imagingelements according to any one of [A01] to [A36].

[C01]<<Solid-State Imaging Apparatus: First Aspect>>

A solid-state imaging apparatus including:

a plurality of imaging elements,

in which each imaging element includes

a photoelectric conversion unit formed by stacking a first electrode, aphotoelectric conversion layer, and a second electrode,

the photoelectric conversion unit further includes

a charge storage electrode that has an opposite region opposite to thefirst electrode via an insulating layer, and

a transfer control electrode opposite to the first electrode and thecharge storage electrode via the insulating layer, and

the photoelectric conversion layer is disposed above at least the chargestorage electrode via the insulating layer.

[C02]<<Solid-state imaging apparatus: first aspect>>

A solid-state imaging apparatus including: a plurality of imagingelements according to any one of [A01] to [A36].

[C03]<<Solid-state imaging apparatus: first aspect>>

A solid-state imaging apparatus including a plurality of stacked-typeimaging elements including at least one imaging element according to anyone of [A01] to [A36].

[C04]<<Solid-state imaging apparatus: second aspect>>

A solid-state imaging apparatus including:

a plurality of imaging element blocks formed by a plurality of theimaging elements according to any one of [A01] to [A36],

in which a first electrode is shared by the plurality of imagingelements forming the imaging element block.

[C05]<<Solid-state imaging apparatus: second aspect>>

A solid-state imaging apparatus including:

a plurality of imaging element blocks formed by a plurality ofstacked-type imaging elements,

in which each stacked-type imaging element includes at least one imagingelement according to any one of [A01] to [A36], and

a first electrode is shared by the plurality of imaging elements formingthe imaging element block.

[C06] The solid-state imaging apparatus described in [C04] or [C05],

in which the plurality of imaging elements is arrayed in a 2-dimensionalmatrix form, and

the imaging element block is formed by 2×2 imaging elements.

[C07] The solid-state imaging apparatus described in [C04] or [C05],

in which the plurality of imaging elements is arrayed in a 2-dimensionalmatrix form, and

the imaging element block is formed by two diagonally adjacent imagingelements.

[C08] The solid-state imaging apparatus according to any one of [C01] to[C07],

in which, in each imaging element, the transfer control electrodesurrounds the charge storage electrode in a frame form, and

the transfer control electrode is shared by the adjacent imagingelements.

[C09] The solid-state imaging apparatus described in any one of [C01] to[C08], in which one on-chip microlens can be disposed above one imagingelement.

[C10] A solid-state imaging apparatus described in [C04] or [C05], inwhich the imaging element block can be formed by two imaging elementsand one on-chip microlens can be disposed above the imaging elementblock.

[C11] The solid-state imaging apparatus according to any one of [C04] to[C10], in which one floating diffusion layer is provided for a pluralityof imaging elements.

[D01]<<method of driving the solid-state imaging apparatus>>

A method of driving the solid-state imaging apparatus including aplurality of imaging elements described in any one of [A01] to [A36],the method of driving the solid-state imaging apparatus by repeating thesteps of:

discharging charges in the first electrode out of the system whilecharges in the photoelectric conversion layer are stored simultaneouslyin all the imaging elements; and

transferring the charges stored in the photoelectric conversion layersto the first electrode simultaneously in all the imaging elements andsequentially reading the charges transferred to the first electrode ineach imaging element after completion of the transferring.

REFERENCE SIGNS LIST

-   10′₁, 10′₂, 10′₃ Photoelectric conversion unit segment-   13 Various imaging element constituent elements located below an    interlayer insulating layer-   14 On-chip microlens (OCL)-   15 Light shielding layer-   21 First electrode-   22 Second electrode-   23 Photoelectric conversion layer-   23A Upper photoelectric conversion layer-   23B Lower semiconductor layer-   23′₁, 23′₂, 23′₃ Photoelectric conversion layer segment-   24, 24″₁, 24″₂, 24″₃ Charge storage electrode-   24A, 24B, 24C, 24′₁, 24′₂, 24′₃ Charge storage electrode segment-   24 a, 24 b, 24 c, 24 d Corner of charge storage electrode-   24 a Opposite region-   24S₁, 24S₂, 24S₃ Side of charge storage electrode-   24AR₁ First region of charge storage electrode-   24AR₂ Second region of charge storage electrode-   25, 25′, 25″ Transfer control electrode (charge transfer electrode)-   25SG₁, 25SG₂ Transfer control electrode segment-   26 charge discharge electrode-   31, 33, 41, 43 n-type semiconductor region-   32, 34, 42, 44, 73 p⁺ layer-   35, 36, 45, 46 Gate section of transfer transistor-   35C, 36C Region of semiconductor substrate-   36A Transfer channel-   51 Gate section of reset transistor TR1 _(rst)-   51A Channel forming region of reset transistor TR1 _(rst)-   51B, 51C Source/drain region of reset transistor TR1 _(rst)-   52 Gate section of amplification transistor TR1 _(amp)-   52A Channel forming region of amplification transistor TR1 _(amp)-   52B, 52C Source/drain region of amplification transistor TR1 _(amp)-   53 Gate section of select transistor TR1 _(sel)-   53A Channel forming region of select transistor TR1 _(sel)-   53B, 53C Source/drain region of select transistor TR1 _(sel)-   61 Contact hole portion-   62 Wiring layer-   63, 64, 68A Pad portion-   65, 68B Connection hole-   66, 67, 69 Connection portion-   70 Semiconductor substrate-   70A First surface side of the semiconductor substrate (front    surface)-   70B Second surface side of the semiconductor substrate (back    surface)-   71 Element separation region-   72 Oxide film-   74 HfO₂ film-   75 Insulating material film-   76, 81 Interlayer insulating layer-   82 Insulating layer-   82′₁, 82′₂, 82′₃ Insulating layer segment-   82 a First surface of insulating layer-   82 b Second surface of insulating layer-   82 c Third surface of insulating layer-   83 Insulating layer-   85, 85A, 85B, 85C Opening-   86, 86A Second opening-   100 Solid-state imaging apparatus-   101 Stacked-type imaging element-   111 Imaging region-   112 Vertical drive circuit-   113 Column signal processing circuit-   114 Horizontal drive circuit-   115 Output circuit-   116 Drive control circuit-   117 Signal line (data output line)-   118 Horizontal signal line-   200 Electronic device (camera)-   201 Solid-state imaging apparatus-   210 Optical lens-   211 Shutter device-   212 Drive circuit-   213 Signal processing circuit-   FD₁, FD₂, FD₃, 45C, 46C Floating diffusion layer-   TR1 _(trs), TR2 _(trs), TR3 _(trs) Transfer transistor-   TR1 _(rst), TR2 _(rst), TR3 _(rst) Reset transistor-   TR1 _(amp), TR2 _(amp), TR3 _(amp) Amplification transistor-   TR1 _(sel), TR3 _(sel), TR3 _(sel) Select transistor-   V_(DD) Power supply-   TG₁, TG₂, TG₃ Transfer gate line-   RST₁, RST₂, RST₃ Reset line-   SEL₁, SEL₂, SEL₃ Select line-   VSL, VSL₁, VSL₂, VSL₃ Signal line (data output line)-   V_(OA), V_(OT), V_(OU) Wiring

The invention claimed is:
 1. An imaging element, comprising: aphotoelectric conversion unit that includes: a first electrode, aphotoelectric conversion layer, and a second electrode, wherein thephotoelectric conversion layer is in contact with the first electrode; acharge storage electrode that has a region, wherein the region isopposite to the first electrode via an insulating layer; and a transfercontrol electrode that is opposite to the first electrode and the chargestorage electrode via the insulating layer, wherein the photoelectricconversion layer is above the charge storage electrode via theinsulating layer, the transfer control electrode includes two transfercontrol electrode segments, the two transfer control electrode segmentsand two sides of each charge storage electrode of a plurality of chargestorage electrodes are on both sides of the region, the charge storageelectrode is included in the plurality of charge storage electrodes, thetwo transfer control electrode segments are adjacent to the two sides ofeach charge storage electrode of the plurality of charge storageelectrodes, the two sides of each charge storage electrode of theplurality of charge storage electrodes are a first side and a secondside, a length of the first side is L1, a length of the second side isL2, the two transfer control electrode segments include a transfercontrol electrode segment along the first side and a transfer controlelectrode segment along the second side, a distance between the firstelectrode and an end of the transfer control electrode segment along thefirst side is in a range of 0.02×L1 to 0.5×L1, and a distance betweenthe first electrode and an end of the transfer control electrode segmentalong the second side is in a range of 0.02×L2 to 0.5×L2.
 2. The imagingelement according to claim 1, wherein the photoelectric conversion layeris above the charge storage electrode and the transfer control electrodevia the insulating layer.
 3. The imaging element according to claim 1,wherein a shape of the charge storage electrode is a rectangle, thecharge storage electrode includes a first corner, a second corner, athird corner, and a fourth corner, and the first corner corresponds tothe region.
 4. The imaging element according to claim 3, wherein thefirst corner has roundness.
 5. The imaging element according to claim 3,wherein the first corner is chamfered.
 6. An imaging element,comprising: a photoelectric conversion unit that includes: a firstelectrode, a photoelectric conversion layer, and a second electrode,wherein the photoelectric conversion layer is in contact with the firstelectrode; a charge storage electrode that has a region, wherein theregion is opposite to the first electrode via an insulating layer; and atransfer control electrode that is opposite to the first electrode andthe charge storage electrode via the insulating layer, wherein thephotoelectric conversion layer is above the charge storage electrode viathe insulating layer; and a control unit on a semiconductor substrate,wherein the control unit includes a drive circuit, the first electrode,the charge storage electrode, and the transfer control electrode areconnected to the drive circuit, based on a charge storage period, thedrive circuit is configured to: apply a potential V₁₁ to the firstelectrode, apply a potential V₁₂ to the charge storage electrode, andapply a potential V₁₃ to the transfer control electrode, wherein thephotoelectric conversion layer is configured to: generate a charge; andstore the charge based on the charge storage period, based on a chargetransfer period, the drive circuit is further configured to: apply apotential V₂₁ to the first electrode; apply a potential V₂₂ to thecharge storage electrode; and apply one of a potential V₂₃ or thepotential V₁₃ to the transfer control electrode, wherein the controlunit is configured to read the stored charge via the first electrode,based on a potential of the first electrode is higher than a potentialof the second electrode, V₁₂>V₁₃ and V₂₂<V₂₃<V₂₁, or V₁₂>V₁₃ andV₂₂<V₁₃<V₂₁, and based on the potential of the first electrode is lowerthan the potential of the second electrode, V₁₂<V₁₃ and V₂₂>V₂₃>V₂₁, orV₁₂<V₁₃ and V₂₂>V₁₃>V₂₁.
 7. A stacked-type imaging element, comprising:at least one imaging element that includes a photoelectric conversionunit, wherein the photoelectric conversion unit includes: a firstelectrode, a photoelectric conversion layer, and a second electrode,wherein the photoelectric conversion layer is in contact with the firstelectrode; a charge storage electrode that has a region, wherein theregion is opposite to the first electrode via an insulating layer; and atransfer control electrode that is opposite to the first electrode andthe charge storage electrode via the insulating layer, wherein thephotoelectric conversion layer is above the charge storage electrode viathe insulating layer; the transfer control electrode includes twotransfer control electrode segments, the two transfer control electrodesegments and two sides of each charge storage electrode of a pluralityof charge storage electrodes are on both sides of the region, the chargestorage electrode is included in the plurality of charge storageelectrodes, the two transfer control electrode segments are adjacent tothe two sides of each charge storage electrode of the plurality ofcharge storage electrodes, the two sides of each charge storageelectrode of the plurality of charge storage electrodes are a first sideand a second side, a length of the first side is L1, a length of thesecond side is L2, the two transfer control electrode segments include atransfer control electrode segment along the first side and a transfercontrol electrode segment along the second side, a distance between thefirst electrode and an end of the transfer control electrode segmentalong the first side is in a range of 0.02×L1 to 0.5×L1, and a distancebetween the first electrode and an end of the transfer control electrodesegment along the second side is in a range of 0.02×L2 to 0.5×L2.
 8. Asolid-state imaging apparatus, comprising: a plurality of imagingelements, wherein each imaging element of the plurality of imagingelements includes a photoelectric conversion unit that includes: a firstelectrode, a photoelectric conversion layer, and a second electrode,wherein the photoelectric conversion layer is in contact with the firstelectrode; a charge storage electrode that has a region, wherein theregion is opposite to the first electrode via an insulating layer; and atransfer control electrode opposite to the first electrode and thecharge storage electrode via the insulating layer, wherein thephotoelectric conversion layer is above the charge storage electrode viathe insulating layer, the transfer control electrode includes twotransfer control electrode segments, the two transfer control electrodesegments and two sides of each charge storage electrode of a pluralityof charge storage electrodes are on both sides of the region, the chargestorage electrode is included in the plurality of charge storageelectrodes, the two transfer control electrode segments are adjacent tothe two sides of each charge storage electrode of the plurality ofcharge storage electrodes, the two sides of each charge storageelectrode of the plurality of charge storage electrodes are a first sideand a second side, a length of the first side is L1, a length of thesecond side is L2, the two transfer control electrode segments include atransfer control electrode segment along the first side and a transfercontrol electrode segment along the second side, a distance between thefirst electrode and an end of the transfer control electrode segmentalong the first side is in a range of 0.02×L1 to 0.5×L1, and a distancebetween the first electrode and an end of the transfer control electrodesegment along the second side is in a range of 0.02×L2 to 0.5×L2.
 9. Asolid-state imaging apparatus, comprising: a plurality of stacked-typeimaging elements that includes at least one imaging element, wherein theat least one imaging element includes a photoelectric conversion unit,and the photoelectric conversion unit includes: a first electrode, aphotoelectric conversion layer, and a second electrode, wherein thephotoelectric conversion layer is in contact with the first electrode; acharge storage electrode that has a region, wherein the region isopposite to the first electrode via an insulating layer; and a transfercontrol electrode that is opposite to the first electrode and the chargestorage electrode via the insulating layer, wherein the photoelectricconversion layer is above the charge storage electrode via theinsulating layer, the transfer control electrode includes two transfercontrol electrode segments, the two transfer control electrode segmentsand two sides of each charge storage electrode of a plurality of chargestorage electrodes are on both sides of the region, the charge storageelectrode is included in the plurality of charge storage electrodes, thetwo transfer control electrode segments are adjacent to the two sides ofeach charge storage electrode of the plurality of charge storageelectrodes, the two sides of each charge storage electrode of theplurality of charge storage electrodes are a first side and a secondside, a length of the first side is L1, a length of the second side isL2, the two transfer control electrode segments include a transfercontrol electrode segment along the first side and a transfer controlelectrode segment along the second side, a distance between the firstelectrode and an end of the transfer control electrode segment along thefirst side is in a range of 0.02×L1 to 0.5×L1, and a distance betweenthe first electrode and an end of the transfer control electrode segmentalong the second side is in a range of 0.02×L2 to 0.5×L2.